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Bidirectional over-voltage and electrostatic discharge protector

A technology for electrostatic discharge protection and overvoltage, which is applied in the direction of circuits, electrical components, electric solid devices, etc., and can solve problems such as no function

Inactive Publication Date: 2005-11-23
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in common overvoltage / ESD protection circuits, there is no such function

Method used

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  • Bidirectional over-voltage and electrostatic discharge protector
  • Bidirectional over-voltage and electrostatic discharge protector
  • Bidirectional over-voltage and electrostatic discharge protector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Figure 3-1 It is a cross-sectional view of an overvoltage / electrostatic discharge protection device of the present invention; Figure 3-2 for Figure 3-1 The equivalent circuit diagram.

[0041] The overvoltage / electrostatic discharge device of the present invention is fabricated on a P-type substrate 30 . In the vertical direction, the P+ doped region 32, the N-type well 34 and the P-type substrate 30 constitute a parasitic pnp double-junction transistor Q1 pnp . In the vertical direction, the P+ doped region 42, the N-type well 38 and the P-type substrate 30 constitute a parasitic pnp double-junction transistor Q2 pnp. In the horizontal direction, the N-type well 38, the P-type substrate 30 and the N-type well 34 constitute another npn double-junction transistor Qnpn, which is formed in the field oxide layer separating the two N-type wells (34, 38) 48 below. The N+ doped region 36 serves as an electrical contact point of the N-type well 34 and is coupled to th...

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PUM

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Abstract

This in ion relates to a two-way over voltage and electrostatic discharge protection device including a P type semiconductor layer, first and second N type conductive layers, a first P type and a first N type doped areas, a second P type and a second N type doped areas. The first and the second N conductive layers are separately designed on the surface of the semiconductor. The first P and N types doped areas are set on the surface of the first N type conductive layer and second P and second N type are on the second and the first is coupled to an input / output end connection weld pack-up and the second to a supply line. When the voltage exceeds a certain sphere, the two-way protection device is unducted to release strain to protect internal circuits.

Description

technical field [0001] The invention relates to an electrical overstress (EOS) and electrostatic discharge (ESD) protection device on an integrated circuit, in particular to a bi-directional overvoltage / ESD protection element. Background technique [0002] With the development of integrated circuit (integrated circuit, IC), the integration level of IC is getting higher and higher, and the components in it are getting more and more precise, but it also makes the components in IC more vulnerable to accidental overvoltage or electrostatic voltage. . Therefore, overvoltage and electrostatic discharge become one of the important factors of IC reliability. In IC design, an overvoltage / electrostatic discharge protection circuit is often installed between the output / input terminal and the power line, or between different power lines, to ensure that the components in the IC are not damaged by overvoltage / electrostatic discharge. [0003] Picture 1-1 It is a common overvoltage / elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/60H01L23/62H01L27/00
Inventor 陈伟梵
Owner WINBOND ELECTRONICS CORP