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Linear current/voltage characteristics metal oxide semiconductor output driving circuit

A technology for outputting drive circuits and linear currents, applied in semiconductor devices, circuits, electric solid-state devices, etc., can solve difficult-to-reach problems

Inactive Publication Date: 2005-11-23
SILICON INTEGRATED SYSTEMS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For known MOS output driver circuits, it is difficult to provide a fixed output impedance when a pull-up or pull-down transition occurs

Method used

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  • Linear current/voltage characteristics metal oxide semiconductor output driving circuit
  • Linear current/voltage characteristics metal oxide semiconductor output driving circuit
  • Linear current/voltage characteristics metal oxide semiconductor output driving circuit

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Embodiment Construction

[0014] The circuit described below is made up of Field Effect Transistors (FETs). However, the circuits described in the present invention are not limited to the use of field effect transistors, and are not limited to other transistors such as bipolar junction transistors (bipolar junction transistors), or combinations of field effect transistors and bipolar junction transistors, or any other similar technology. Furthermore, the invention can be implemented in different ways, such as in a single component or an integrated circuit.

[0015] Please refer to Figure 2a , the first preferred embodiment of the present invention includes a first input transistor 210, preferably a PMOSFET device, and a second input transistor 215, preferably an NMOSFET device. The first pair of transistors includes a PMOS field effect transistor 220 and an NMOS field effect transistor 225, and the second pair of transistors includes a PMOS field effect transistor 230 and an NMOS field effect transi...

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Abstract

A MOS output driver with linear current / voltage characteristics (the output impedance is constant when output voltage changes for example) is composed of the first and the second input transistors for inputting the first and the second input signals and with their output nodes coupled with the output node of circuit, the first and the second transistor pairs for generating the second and the fourth control signals according to the first and the third control signals and output signal, and the first and the second output transistors for receiving the second and the fourth control signals and with their output nodes coupled to the output node of circuit.

Description

technical field [0001] The present invention relates to a metal oxide semiconductor output driver circuit with linear current / voltage characteristics. Background technique [0002] Due to the advantages of fast response speed, low power consumption, and high integration, semiconductor chips containing metal oxide semiconductor (MOS) circuits are widely used. For example, metal-oxide-semiconductor output driver circuits are often used to drive to the required voltage level to deliver the desired logic value. [0003] refer to figure 1 A known metal oxide semiconductor output driver circuit is described. The source node (source node) of the P-shaped metal oxide semiconductor field effect transistor (PMOSFET) 140 is connected to the reference voltage Vss. The reference voltage is a relatively stable voltage source provided according to design specifications, such as 3 or 5 volts commonly used in MOS devices. When the initial voltage at the input nodes 1...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/00
Inventor 萧舜元吕俊明
Owner SILICON INTEGRATED SYSTEMS