Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quick annealing method

A thermal annealing, rapid technology, applied in the field of thermal process

Inactive Publication Date: 2006-09-06
MACRONIX INT CO LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the defects of the existing rapid thermal annealing method, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time. This is obviously a problem that the relevant industry is eager to solve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quick annealing method
  • Quick annealing method
  • Quick annealing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0056] The specific manufacturing method, steps, features and effects of the rapid thermal annealing method according to the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.

[0057] see figure 2 , image 3 as shown, figure 2 It is a schematic process flow diagram of a method for rapid thermal annealing of a semiconductor wafer according to a preferred embodiment of the present invention, image 3 It is a schematic diagram showing the temperature curve of a rapid thermal annealing process of a semiconductor wafer changing with the process time in a preferred embodiment of the present invention.

[0058] The method for rapid thermal annealing of the present invention comprises the following process steps:

[0059] First, see figure 2 In step S200, the wafer (not shown) is loaded into the reaction chamber of the rapid thermal annealing device (device model: AST2800), wherein the rapid thermal anneal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention is quick wafer annealing method inside one quick annealing apparatus. The quick annealing process includes two steps. In the first step, the quick annealing parameter is monitored and judged whether to exceed some range, which is the first normal annealing parameter plus / minus one first certain set value. In the second step, the quick annealing parameter is monitored and judged whether to exceed some range, which is the second normal annealing parameter plus / minus one second certain set value. The said process can detect the stability, and in case the annealing process is unstable, the quick annealing process is stopped to avoid the wafer loss.

Description

technical field [0001] The present invention relates to a heat treatment method in the field of metallurgy or a thermal process in equipment, in particular to a rapid thermal annealing method capable of detecting the stability of a rapid thermal annealing (Rapid Thermal Annealing, RTA) process and avoiding wafer scrapping . Background technique [0002] In the semiconductor manufacturing process, the commonly used thermal process is to use a thermal furnace tube or a rapid thermal annealing process, and the rapid thermal annealing process can be completed in a relatively short time compared with the thermal furnace tube. Thermal process, so its thermal budget (Thermal Budget) is quite low, so it is quite suitable for the semiconductor process that must control the diffusion and profile of dopants. [0003] see figure 1 , is a schematic diagram of a conventional rapid thermal annealing device 100 . When using the rapid thermal annealing apparatus 100 to carry out the therm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B33/02H01L21/324H01L21/477
Inventor 张耀元周世良李若玺林宗德曾国佑练文政
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com