Piezoelectric driven F-P chamber tunable optical filters and manufacture thereof
A piezoelectric drive and optical filtering technology, which is applied in optical components, optics, nonlinear optics, etc., can solve the problems of low yield, complicated process, and inability to provide in large quantities.
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Embodiment 1
[0031] Embodiment 1 The present invention provides such as figure 1 (b) Piezoelectrically driven FP cavity tunable optical filter structural unit. This structure is composed of A, B, and C, which are tightly combined. A can be silicon, glass or other bulk materials that are easy to be processed by micromachining. B is piezoelectric material, and C is SOI silicon wafer. A has an upper silicon body 1, an upper anti-reflection film 2, an upper high-reflection film 3, a metal upper electrode 4 at the left end, and a metal upper electrode 5 at the right end. There are five parts in total; There are five parts including a piezoelectric body 6, a piezoelectric body upper metal 7, a piezoelectric lower metal layer 8, and an upper glue layer 9 and a lower glue layer 10 for bonding with parts A and C; Silicon layer 11, high platform 12, lower high-reflection film 13, lower anti-reflection film 14, left end metal lower electrode 15, right end metal lower electrode 16 and other six parts...
Embodiment 2
[0048] Example 2 as Figure 7 As shown, the center of the lower surface of the upper silicon body 1 in this embodiment is a concave cylindrical surface, spherical surface or approximately cylindrical surface, spherical surface 22, and its normal direction is perpendicular to another plane, forming a "flat-concave" FP resonant cavity.
[0049]Others of this embodiment are the same as embodiment 1.
Embodiment 3
[0050] Embodiment 3 Replace the SOI silicon wafer made in part C in Examples 1 and 2 with an ordinary silicon wafer, and use the ordinary silicon wafer to etch or etch a certain depth of the barrier block 17 first, and the bottom surface after the barrier block 17 is etched The polishing process is then performed to improve the surface quality, and other structures such as the high platform 12 and the bottom silicon layer 11 are produced by using a corrosion or etching process. Others are with embodiment 1,2.
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