Compound semiconductor switched circuit device

Abstract

Among compound semiconductor switching circuit devices, the usefulness of a two-series switching circuit device is recognized, but there are problems such as an increase in the number of component pins and an increase in chip size. The solution is: use 8 pins to realize the 2-circuit 2-connection switching element that can be operated by the control signal of 1 set of complementary signals, and hide it in the chip size module. By arranging the two resistors of the switching circuit device between the FET and the electrode pads, and intersecting one resistor with the gate metal layer, the size of the chip and the size of the package can be reduced.

Description

technical field [0001] The present invention relates to a compound semiconductor switching circuit device used in high-frequency switching applications, and more particularly to a compound semiconductor switching circuit device incorporating a two-connection switching circuit. Background technique [0002] Microwaves in the GHz band are usually used in mobile communication equipment such as mobile phones, and switching elements for switching these high-frequency signals are often used in antenna switching circuits or switching circuits for transmission and reception (for example, Japanese Patent Laid-Open No. 9-181642 ). Gallium arsenide (GaAs) field-effect transistors (hereinafter referred to as FETs) are often used as this device in order to deal with high frequencies. Along with this, monolithic microwave integrated circuits (MMICs) that integrate the aforementioned switching circuits themselves have been further developed. . [0003] Figure 18 ...

AI Technical Summary

Problems solved by technology

[0015] If one wants to make the respective control terminals that can be shared in the circuit structure, cross wiring will be generated, and if it is avoided, there will be a problem that the chip area will increase unnecessarily.

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