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Semiconductor device and making method thereof

A technology of semiconductors and amorphous semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc.

Inactive Publication Date: 2007-01-10
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the crystalline silicon film formed on the glass substrate with poor heat resistance cannot adopt this kind of heat treatment.

Method used

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  • Semiconductor device and making method thereof
  • Semiconductor device and making method thereof
  • Semiconductor device and making method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0177] The crystalline semiconductor layer having a high (101) plane orientation ratio to be obtained in the present invention is characterized by comprising a multilayer silicon-based semiconductor thin film. In typical embodiments, the layer of crystalline semiconductor is formed using a first layer of crystalline semiconductor film including germanium on silicon and a second layer of semiconductor film on silicon. The first layer of crystalline semiconductor film is formed by forming the first layer of amorphous semiconductor film on the surface of the insulator, and then crystallizing it by adding catalyst elements to accelerate crystallization. The second layer of crystalline semiconductor film is formed by forming a second layer of amorphous semiconductor film on the first layer of crystalline semiconductor film, and then epitaxially growing crystals on it by heat treatment or laser irradiation.

[0178] figure 1 The structure of the crystalline semiconductor layer in t...

Embodiment approach 2

[0214] like Figure 21A As shown, a lower insulating film 11 is formed on a substrate 10, and a layer of amorphous silicon-germanium (Si-germanium) is formed on the lower insulating film 11. 1-x Ge x : x=0.001-0.05) thin film 12 as the first layer of semiconductor. The underlying insulating film 11 utilizes SiH 4 , NH 3 and N 2 O is used as the active gas to form silicon oxynitride film and SiH 4 and N 2 O is used as the stacked structure of the silicon oxynitride film deposited by the active gas.

[0215] The first layer of semiconductor 12 is a layer of amorphous silicon-germanium thin film formed by plasma CVD process or low pressure CVD process, which is similar to Embodiment 1. The thickness of this layer of amorphous semiconductor film is 20-100 nanometers.

[0216] Next the first layer of semiconductor is allowed to crystallize. In the crystallization process, a catalyst element 13 similar to that in Embodiment 1 is added to the surface of the first-layer semic...

example 1

[0237] Refer below Figures 6A-6F and 7A-7C introduce an example of the present invention. First, if Figure 6A As shown, the SiH 4 , NH 3 and N 2 O is used as an active gas to form a layer of silicon oxynitride film, SiH 4 and N 2 O is used as an active gas to form a silicon oxynitride film, which are stacked in sequence to form an insulating layer on the substrate 10 as a barrier layer 11 . Thereon, a film is used as a first layer of amorphous semiconductor film 12 of silicon, to which 3 atomic percent of germanium is added. Utilizes SiH with a 9:1 flow ratio 4 and H 2 Dilute to 10% GeH 4 This layer of amorphous semiconductor thin film is formed by plasma CVD process. The heating temperature of the substrate is 300 degrees Celsius, the pressure of the reaction chamber is 33.25Pa, using 27MHz, 0.35W / cm 2 The radio frequency power decomposes the active gas to deposit an amorphous semiconductor film. At this time, the discharge is an intermittent discharge with a re...

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Abstract

An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semiconductor device using a crystalline semiconductor film with high quality equivalent to a single crystal. A first crystalline semiconductor film and a second crystalline semiconductor film are formed overlying a substrate, which integrally structure a crystalline semiconductor layer. The first and second crystalline semiconductor films are polycrystalline bodies aggregated with a plurality of crystal grains. However, the crystal grains are aligned toward a (101)-plane orientation at a ratio of 30 percent or greater, preferably 80 percent or greater. Also, relying on a plane orientation of the crystal grains in the first crystalline semiconductor film, the second crystalline semiconductor film has a plane orientation also aligned in the same direction with a probability of 60 percent or higher.

Description

technical field [0001] The present invention relates to a semiconductor thin film with a crystal structure, a semiconductor device made with it and a method for manufacturing these devices, in particular, a semiconductor thin film with good crystallinity and a single crystal orientation, a semiconductor device made with it and the method for manufacturing these device method. Background technique [0002] A technique called laser annealing is used to crystallize an amorphous silicon thin film formed on an insulating substrate such as glass. In this laser annealing technique, the energy is about 100-500mJ / cm 2 A laser beam is irradiated on the amorphous silicon film to achieve crystallization. [0003] To crystallize amorphous silicon, it needs to be heated to 600 degrees Celsius or higher. But the laser process has the nice property of being able to crystallize thin films of amorphous silicon while keeping the substrate near room temperature. The laser here is a solid-st...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00G02F1/1368H01L21/20H01L21/322H01L21/324H01L21/336H01L21/77H01L21/84H01L29/04H01L29/786H01L31/036H01L31/20
CPCH01L21/02532H01L27/1285H01L27/1277H01L21/02675H01L21/02592H01L21/0237H01L21/0262H01L29/78696H01L27/1296H01L21/02672H01L29/04H01L29/045H01L21/02667H01L21/324
Inventor 山崎舜平三津木亨笠原健司
Owner SEMICON ENERGY LAB CO LTD