Chip semiconductor device mixed formed with store and logic circuit and producing method thereof

Abstract

A semiconductor substrate has a logic region and a memory region. A multilayer wiring layer is formed on the logic region and the memory region. A diffusion preventing film is formed at least between the multilayer wiring layer in the logic region and the element forming layer in the logic region for the purpose of preventing H2O from diffusing into the logic region.

Description

[0001] Referenced related applications [0002] This application is based on the prior Japanese Patent Application No. 2002-127353 (April 26, 2002), the entire contents of which are referred to herein. technical field [0003] The present invention relates to a semiconductor device in which at least a memory and a logic circuit are mixed and formed in a single chip, and a method for manufacturing the same. Background technique [0004] High-performance logic devices such as CPUs and semiconductor devices such as high-speed SRAMs must suppress delays in transmission signals in order to operate at high speeds. Therefore, it is best to use multilayer wiring to reduce wiring resistance, or use Cu (copper) that can achieve low resistance as the wiring material. In addition, as an insulating film that insulates between multilayer wiring, it is necessary to use a relatively Dielectric constant (k) lower than SiO 2 The material of the membrane. [0005] As such a low dielectric c...

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Problems solved by technology

The second reason is that due to the high hygroscopicity of low-k materials, after the low-k film is formed, H 2 The amount of O released increases

Therefore, it is difficult to balance the reliability of the transistors in the logic area and the data retention characteristics of the DRAM area

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