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Polishing method and device

A technique for manufacturing polishing tools and devices, applied in the field of polishing equipment, process polishing, and equipment for the processing method, can solve the problems of semiconductor integrated circuit manufacturing difficulties, inability to apply mass production, high cost of polishing processes, etc., and achieve processing speed The effect of small unevenness, low cost and easy cleaning

Inactive Publication Date: 2007-03-07
TESSERA ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is still difficult to apply this conventional technology to the manufacture of semiconductor integrated circuits including various large and small patterns, such as memory LSIs.
Moreover, the required cost of the polishing process is quite high, resulting in the fatal shortcoming that it cannot be applied to mass production.

Method used

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Embodiment Construction

[0036] best practice

[0037] Embodiments of the present invention will be described in detail below. The present invention is characterized in that the conventional polishing pad in the apparatus shown in FIG. 2 is replaced with a specific grinding stone with optimally controlled hardness. As described above with respect to the prior art, several techniques are known for planarizing the surface of a semiconductor wafer using fine-grained grindstones. But all these techniques suffer from the disadvantage of causing small scratches on the treated surface. So it still cannot be put into practical application.

[0038] So far, it has been believed that the cause of this scratching is mainly due to the particle size being too large. However, research by the present inventors has found that this problem should be attributed to the too large modulus of elasticity of the grinding stone used, rather than a particle size problem.

[0039] The present invention is characterized in t...

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Abstract

The invention relates to a polishing method and device, adopting the mill stone including abrasive particles and bonding resin bonded with the abrasive particles. It uses the bonding resin to obtain the mill stone with the needed elastic modulus. It uses the mill stone to make the substrate surface smooth and uniform. In addition, firstly using the small elastic modulus polishing tool to polish the substrate, and then using the large one for polishing to obtain the damage-reduced polished surface.

Description

[0001] This application is a divisional application of Patent Application No. 95197955.8 filed on September 13, 1995, entitled "Polishing Method and Apparatus". [0002] Field [0003] The present invention relates to a technique for planarizing substrate surface patterns by polishing, and in particular to a polishing method used in the process of manufacturing semiconductor integrated circuits, and polishing equipment used in the polishing method. Background technique [0004] The semiconductor manufacturing process includes a multi-step process. 1 (a) - 1 (f) to illustrate a wiring process, as a process example of the application of the present invention. [0005] FIG. 1(a) is a cross-sectional view of a wafer with a first wiring layer formed thereon. An insulating film 2 is formed on the surface of a wafer substrate 1 with a transistor portion formed thereon, and a wiring layer 3 such as an aluminum layer is formed on the insulating film 2 . In order to connect this tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304B24B1/00
Inventor 森山茂夫山口克彦本間喜夫松原直石田吉弘河合亮成
Owner TESSERA ADVANCED TECH