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Pixel structure and its making method

A technology of pixel structure and manufacturing method, applied in nonlinear optics, instruments, optics, etc., can solve problems such as parasitic capacitance change and light leakage

Inactive Publication Date: 2007-03-14
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art mentioned above, and provide a pixel structure and its manufacturing method to solve the problem that the parasitic capacitance between the gate and the drain easily changes in the conventional pixel structure. and the problem of light leakage

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Embodiment Construction

[0035] The specific implementation, structure, features and functions of the pixel structure and its manufacturing method according to the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.

[0036] Please refer to FIG. 2 and FIG. 3 , FIG. 2 is a top view of a pixel structure according to a preferred embodiment of the present invention, and FIG. 3 is a schematic cross-sectional view taken from I-I' in FIG. 2 . The manufacturing method of the pixel structure of the present invention is to firstly define a scan wiring 202 on a substrate 200, which is the first metal layer.

[0037] Next, a gate dielectric layer 204 is formed on the scanning wiring 202 to cover the scanning wiring 202 , wherein the material of the gate dielectric layer 204 is, for example, silicon nitride or silicon oxide.

[0038] Afterwards, a channel layer 206 is formed on the gate dielectric layer 204 above the scan wiring 202 . Wherein,...

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Abstract

The invention discloses a pixel structure and making method, where the making method is to set channel layer and drain of the film transistor above but not beyond the scanning wiring, thus reducing the problem of optical creepage of the channel layer and making the parasitic capacitance between the gate and drain will not yet change when the first and second metal layers do not well align during the course of making film transistor.

Description

technical field [0001] The present invention relates to a structure of a semiconductor component and a manufacturing method thereof, in particular to a pixel structure of a Thin Film Transistor Liquid Crystal Display (TFT-LCD) and a manufacturing method thereof. Background technique [0002] The TFT-LCD is mainly composed of a TFT array substrate, a color filter array substrate and a liquid crystal layer, wherein the TFT array substrate is composed of a plurality of TFTs arranged in an array, and one of the pixels corresponding to each TFT The electrode (Pixel Electrode) constitutes several pixel structures. The above-mentioned thin film transistor includes a gate, a channel layer, a drain and a source, which are used as a switch component of a liquid crystal display unit. [0003] Please refer to FIG. 1A , which is a top view of a conventional pixel structure. In a conventional manufacturing method of a pixel structure, firstly, a first metal layer is defined on a substra...

Claims

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Application Information

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IPC IPC(8): G02F1/136
Inventor 来汉中
Owner AU OPTRONICS CORP