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Dynamic RAM with slit capacitor and its mfg. method

A technology of dynamic random access and manufacturing method, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., and can solve problems such as large substrate area

Inactive Publication Date: 2007-03-28
PROMOS TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditionally, transistors are usually arranged next to deep trenches DT, and such memory cells occupy a considerable area of ​​the substrate

Method used

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  • Dynamic RAM with slit capacitor and its mfg. method
  • Dynamic RAM with slit capacitor and its mfg. method
  • Dynamic RAM with slit capacitor and its mfg. method

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Experimental program
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Embodiment Construction

[0053] Structure of DRAM with Trench Capacitors

[0054] The present invention provides a structure of a dynamic random access memory (DRAM) with a trench capacitance. The DRAM is composed of memory cells arranged in a matrix. Each memory cell includes a transistor and a storage capacitor, and the transistor is arranged in an island shape. on the semiconductor structure, and the storage capacitor is disposed on the side of the lower portion of the island-shaped semiconductor structure. The structure of the present invention will be described in detail below with reference to FIG. 4F and FIG. 5F . 4F is a top view of a trench capacitor type DRAM, and FIG. 5F is a cross-sectional view taken along V-V in FIG. 4F .

[0055]As shown in FIG. 4F and FIG. 5F , a substrate 100 , such as a semiconductor substrate, preferably a silicon substrate, has island-like semiconductor structures 106 arranged in a matrix on its upper part, ie, the surface layer.

[0056] The transistor T of the ...

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Abstract

The present invention provides a dynamic random access memory (DRAM) with channel capacitor and its making method. It is characterized by that its first electrode plate is placed on the side wall of lower portion of island-shaped semiconductor structure of the base, and the second electrode plate is placed in the surface of lower portion of island-shaped semiconductor structure and surface of base of outer side of island-shaped semiconductor structure, and the capacitor dielectric layer is placed between second electrode plate and first electrode plate. The transistor for controlling channel capacitor is placed on the island-shaped semiconductor structure, it has first and second source / drain and gate electrodes, the embedded band is placed between second source / drain and first electrode plate, and the conductive plug is placed between first source / drain and bit line.

Description

technical field [0001] The present invention relates to a structure of a dynamic random access memory (Dynamic Random Access Memory, referred to as DRAM) and a manufacturing method thereof, in particular to a structure of a dynamic random access memory with a trench capacitor (trench capacitor) and a manufacturing method thereof . Background technique [0002] Capacitors are a common component in the technology of monolithic integrated circuits. In a DRAM chip, a large number of capacitors are required, and each capacitor needs to be combined with a field effect transistor (Field Effect Transistor, FET for short). As the number of required storage capacitors increases, it is therefore necessary to increase the packing density of capacitors per unit area. However, the traditional design of flat capacitors will occupy too much chip surface area. Another technology that designs and forms capacitors in deep trenches of silicon wafers can obtain larger capacitor densities and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/108H01L21/8242H10B12/00
Inventor 王廷薰
Owner PROMOS TECH INC