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Large magneto-resistive sensor having reverse parallel coupling and low HK freedom layer

A magnetoresistive sensor, antiparallel technology, applied in spin exchange coupled multilayer films, magnetic field controlled resistors, magnetic heads using thin films, etc., can solve problems such as lack of attractive force

Inactive Publication Date: 2002-02-20
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the intrinsic uniaxial anisotropy H of the free layer due to antiparallel coupling k increases, making this structure unattractive for free-layer applications

Method used

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  • Large magneto-resistive sensor having reverse parallel coupling and low HK freedom layer
  • Large magneto-resistive sensor having reverse parallel coupling and low HK freedom layer
  • Large magneto-resistive sensor having reverse parallel coupling and low HK freedom layer

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Embodiment Construction

[0024] The following description is of the best mode currently employed to practice the invention. This description is intended to illustrate the general principles of the invention and not to limit the concept of the invention claimed herein.

[0025] Referring now to FIG. 3, a disk drive 300 embodying the present invention is shown. As shown in FIG. 3 , at least one rotatable disk 312 is supported on a shaft 314 and rotated by a disk drive motor 318 . The magnetic recording medium is formed on disk 312 in an annular pattern of concentric data tracks (not shown).

[0026] At least one slider 313 is placed on the disk 312, each slider 313 supporting one or more magnetic read / write heads 321 incorporating the SV sensor of the present invention. As the disk rotates, slider 313 moves radially in and out over disk surface 322, allowing head 321 to access different portions of the disk where desired data is recorded. Each slider 313 is fixed to an actuator arm 319 by a cantileve...

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Abstract

A spin valve (SV) magnetoresistive sensor is provided having an AP-pinned layer, an AP-coupled free layer and a non-magnetic electrically conductive spacer layer sandwiched between the AP-pinned layer and the free layer. The AP-pinned layer comprises first and second ferromagnetic layers separated by an antiparallel coupling (APC) layer. The AP-coupled free layer comprises a third ferromagnetic layer, a fourth ferromagnetic layer and an APC layer sandwiched between the third and fourth ferromagnetic layers. The easy axis of the Co-Fe third ferromagnetic layer has a transverse orientation while the easy axis of the Co-Fe-Hf-O fourth ferromagnetic layer has a longitudinal orientation due to its higher thermal stability resulting in a low net intrinsic uniaxial anisotropy Hk for the AP-coupled free layer. The Co-Fe-Hf-O material of the fourth ferromagnetic layer has high resistivity resulting in reduced sense current shunting by the free layer. The reduced sense current shunting and the specular scattering of electrons both contribute to improving the GMR coefficient of the SV sensor.

Description

technical field [0001] The present invention relates generally to giant magnetoresistive (GMR) sensors for reading information signals from magnetic media, and more particularly to spin valve sensors with antiparallel coupled free layers having low intrinsic uniaxial anisotropy , and related to magnetic storage systems incorporating such sensors. Background technique [0002] Computers often include secondary storage devices with media on which data can be written and data can be read from during subsequent use. Direct access storage devices (disk drives) incorporating rotating magnetic disks are commonly used to store data in magnetic form on the surface of the disk. Data is recorded on radially spaced concentric tracks on the disk surface. Data is then read from the tracks on the disk surface using a head that includes a read sensor. [0003] In high-capacity disk drives, magnetoresistive (MR) read sensors, often referred to as MR sensors, occupy an important role in re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C19/07G01R33/09G11B5/31G11B5/39H01F10/16H01F10/32H10N50/10
CPCB82Y10/00G11B5/3967G01R33/093B82Y25/00G11B5/3903G11B2005/3996G11B5/39
Inventor 哈德耶尔·S·吉尔
Owner IBM CORP