Three-D integrated memory

A three-dimensional integration and three-dimensional storage technology, applied in the fields of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of 3D-M read and write speed, yield programmability, etc.

Inactive Publication Date: 2003-04-23
HANGZHOU HAICUN INFORMATION TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Standalone 3D-M needs to be improved in terms of read and write speed, yield, programmability, etc.

Method used

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[0041] DETAILED DESCRIPTION 1. Three-dimensional integrated memory (3DiM)

[0042] FIG. 2A is a cross-sectional view of a three-dimensional integrated memory (3DiM). 3DiM integrates the 3D-M array 0A and the substrate circuit 0s. The 3D-M array OA includes one or more three-dimensional storage layers 100 . Each three-dimensional storage layer 100 contains multiple address selection lines (20a, 30i...) and multiple 3D-M elements (1ai...). These address select lines contain metallic material and / or doped semiconductor material. The transistor 0T on the substrate and its interconnection 0I (0Ia, 0Ib...) constitute the substrate circuit 0s. From a circuit point of view, the substrate circuit OS includes a substrate integrated circuit OSC and address decoders 12, 18 / 70 (FIG. 2B). These address decoders 12, 18 / 70 provide address decoding for the 3D-M array OA. Contact vias (20av...) provide electrical connections for address select lines (20a...) and sub...

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Abstract

In the 3-D integrated memory (3DiM) the 3-D memory and conventional readable/writable memory and/or data processor are integrated on a chip. As compared with standalone 3D-M its global property (for example speed, finished product rate, programmability and data safety, etc.) is more excellent. Said invented 3-D integrated memory can be used in the integrated circuit test and others.

Description

technical field [0001] The present invention relates to the field of integrated circuits, more specifically, to a three-dimensional integrated memory. Background technique [0002] In a three-dimensional integrated circuit (abbreviated as 3D-IC), one or more three-dimensional integrated circuit layers (abbreviated as 3D-IC layers) are stacked on a substrate in a direction perpendicular to the substrate. The 3D-IC layer is composed of non-single crystal (ie, polycrystalline or amorphous) semiconductor materials, which can have functions such as logic, storage, and simulation. For 3D-IC layers with logic and analog functions, they are more sensitive to defects. Due to the high defect density of non-single crystal semiconductor materials, the yield of this type of 3D-IC is not high. At the same time, the power consumption of logic and analog functions is high, and their three-dimensional integration faces a large heat dissipation problem. In contra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L23/525H01L27/00H01L27/10H01L27/112
Inventor 张国飙
Owner HANGZHOU HAICUN INFORMATION TECH
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