Grey mask and method for making same

A gray-tone mask and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, photoengraving process of pattern surface, optics, etc., can solve the problem of large aspect ratio, shape of light-shielding part, poor pattern accuracy, etching time and so on. long-term issues

Inactive Publication Date: 2003-12-31
HOYA CORP
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this method, since the film thickness is too thick, the aspect ratio (the ratio of the pattern size to the height) is large. As a result, the pattern shape and pattern accuracy of the light-shielding part are poor, and the etching time is long.
In addition, in fact, it is difficult to accurately control the film thickness by half etching, and it is difficult to use it practically.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grey mask and method for making same
  • Grey mask and method for making same
  • Grey mask and method for making same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0082] Next, a first embodiment of the present invention will be described.

[0083]Synthetic data when all graphic data including the shading part, light-transmitting part and gray tone part are included, such as figure 1 As shown in (1), the case where the light-shielding part 1 and the light-transmitting part 2 (such as an amorphous silicon pattern of TFT) and the gray tone part 3 (semi-transmitting part and semi-transmitting part) formed around them is taken as an example. In this situation, figure 1 The data of the light shielding part 1 and the light transmitting part 2 shown in (2) and figure 1 Data separation of the gray tone section 3 shown in (3). Then, after drawing the light-transmitting portion with the exposure amount (100%) that can completely remove the resist, the gray tone portion 3 (semi-transmission portion or semi-transmission portion Translucent part), can be figure 1 (1) A depiction of the graph shown. if figure 1 The drawing pattern shown in ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides one kind of grey mask capable of making transmissivity controllable and homogeneous film thickness and its making process. For example, on the transparent substrate, transmissivity controllable film, low transmissivity film and photoresist film are formed successively; the photoresist film and the low transmissivity film in some part are eliminated to form transparent part; and the photoresist film and partial low transmissivity film in some other part are eliminated to form grey part and to make grey mask.

Description

technical field [0001] The present invention relates to a gray tone mask, its manufacturing method and the like. Background technique [0002] In recent years, in the field of masks for large LCDs, attempts have been made to reduce the number of masks using grayscale masks (Monthly FPD Intelligence, May 1999). [0003] Here, a grayscale mask, for example, such as Figure 5 As shown in (1), it has a light-shielding part 1 , a light-transmitting part 2 and a gray tone part 3 . The gray-tone part 3 is an area where a fine light-shielding pattern 3a is formed within the resolution limit of a large-scale LCD exposure machine using a gray-tone mask. The purpose of its formation is to reduce the amount of light transmitted through this area and reduce The thickness of the photoresist film can optionally be changed according to the amount of irradiation. Both the light-shielding portion 1 and the fine light-shielding pattern 3a are generally formed of films of the same thickness m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F1/32G03F7/26
Inventor 野津手重德
Owner HOYA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap