High frequency switch circuit

Abstract

This invention relates to a high frequency switch circuit including a plurality of high frequency terminals (101, 102, 103) which input / output a high frequency signal, and a plurality of high frequency semiconductor switch sections (121, 122) which switch between these high frequency terminals. The plurality of high frequency semiconductor switch sections are isolated from each other in a DC state by a DC potential isolating section (131), and a DC potential opposite in level to a DC potential applied to a switching signal terminal (111, 112) arranged on the control side of each high frequency semiconductor switch section is applied to both or at least one of the input side and output side of each high frequency semiconductor switch section.

Description

technical field [0001] The present invention relates to a high-frequency switching circuit used for high-frequency communication in portable cellular phone devices and the like. Background technique [0002] figure 1 is a circuit diagram showing a first prior art of a high-frequency switching circuit. This first prior art will refer to figure 1 illustrate. [0003] The first prior art relates to an SPDT circuit (Single Pole Double Transfer: Single Pole Double Throw), which is disclosed in Japanese Unexamined Patent Publication No. 8-139014. The drains and sources of field effect transistors 1 to 5 are cascade-connected between high frequency terminals 101 and 102 . The drains and sources of the field effect transistors 6 to 10 are cascaded between the high frequency terminal 101 and the high frequency terminal 103 . The gates of the field effect transistors 1 to 10 are connected to the resistance elements 51 to 60 . The resistance elements 51 to 55 connected to the gat...

AI Technical Summary

Problems solved by technology

If the Vgs of the non-conducting switch increases negatively to increase the conducting power, the on-resistance of the conducting switch increases

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