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Process for making sub-lithographic photoresist features

A photoresist, lithographic technology, used in photosensitive material processing, application of radioactive source radiation, semiconductor/solid-state device manufacturing, etc.

Inactive Publication Date: 2004-05-05
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, the process required to complete sublithographic photoresist patterns does not require substantial changes to conventional lithographic techniques, tools, materials, equipment, or significant throughput reductions

Method used

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  • Process for making sub-lithographic photoresist features
  • Process for making sub-lithographic photoresist features
  • Process for making sub-lithographic photoresist features

Examples

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Embodiment Construction

[0021] figure 1 Display wafer 13 is located in lithography system 10 . Lithographic system 10 includes chamber 50 , light source 22 , focusing lens assembly 24 , mask or grating 18 , objective lens assembly 26 , and stage 11 . The lithography system 10 is configured to transfer a pattern or image on a mask or reticle 18 to a wafer 13 . The lithography system 10 may be a lithographic camera or stepper controller unit. For example, the lithography system 10 can be a PAS 5500 / 900 series machine made by ASML, a microscan DUV system made by Silicon Valley Group, or a Korean integrated solution (Integrated Solutions) XLS family microlithography (microlithography) system made by the company.

[0022] Wafer 13 includes substrate 12 , layer 14 , and layer 16 of photoresist material. Photoresist layer 16 is placed over layer 14 , which is placed over substrate 12 . Die 13 may be a full integrated circuit (IC) die or a portion of an IC die. Die 13 can be a part of an IC, such as me...

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Abstract

A process for forming sub-lithographic features in an integrated circuit is disclosed herein. The process includes modifying a photoresist layer after patterning and development but before it is utilized to pattern the underlying layers. The modified photoresist layer has different etch rates in the vertical and horizontal directions. The modified photoresist layer is trimmed with a plasma etch. A feature included in the trimmed photoresist layer has a sub-lithographic lateral dimension.

Description

[0001] related application [0002] This application is related to the following applications: U.S. Application No. 09 / 819,692 (Attorney Docket No. 39153 / 404 (F0943) by Okoroanyanwu et al. )); U.S. Application No. 09 / 820,143, entitled "Improvements for Scanning Electron Microscope (SEM) Inspection and Analysis of Photoresist Patterns," by Okoroanyanwu et al. (Attorney Docket No. 39153 / 405(F0945) ); U.S. Application No. 09 / 819,344 (Attorney Docket 39153 / 406(F1061)), entitled "Methods of Reducing Critical Dimensions of Integrated Circuit Device Patterns," by Okoroanyanwu et al.; by Gabriel et al., U.S. Application No. 09 / 819,343 (Attorney Docket 39153 / 298(F0785)), entitled "Selective Photoresist Hardening to Aid Side Edge Trim," and Gabriel et al., entitled "Improving" U.S. Application No. 09 / 819,552 (Attorney Docket No. 39153 / 310 (F0797)) of "Methods for Etching Stability of Ultrathin Photoresist Materials". All of the above applications were filed on the same date as this appl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/40H01L21/027H01L21/28H01L21/3213
CPCH01L21/32139Y10S430/143H01L21/28123H01L21/027
Inventor J·A·雪德斯U·欧可洛尼亚吾杨志宇
Owner GLOBALFOUNDRIES INC
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