Base plate lapping device and method

Abstract

An elastic polishing pad is adhered to the top face of a rotatable table. Above the table is provided a substrate holding apparatus for holding a substrate. The substrate holding apparatus comprises a rotary shaft, a substrate holding head in the form of a disc which is provided integrally with the lower edge of the rotary shaft, a sealing member in the form of a ring which is made of an elastic material and fastened to the peripheral portion of the lower face of the substrate holding head, and a guiding member in the form of a ring which is fastened to the back face of the substrate holding head to be located outside the sealing member. A fluid under pressure is introduced into a fluid flow path formed in the rotary shaft from one end thereof and supplied to a space from the other end of the fluid flow path so as to press the substrate against the polishing pad.

Description

[0001] This application is a divisional application of an invention patent application with an application date of April 8, 1996, an application number of 96104611.2, and an invention title of "holding device for a substrate to be polished, a grinding device for a substrate, and a method for grinding a substrate". technical field [0002] The present invention relates to a substrate polishing method for chemical mechanical polishing (CMP), a substrate polishing device, and a holding device for a substrate to be polished using the substrate polishing method, wherein CMP is used for semiconductor substrates made of silicon and liquid crystals. The surface of the substrate constituted by the substrate or the like is planarized. Background technique [0003] After 1990, in the chemical mechanical polishing technology for chemical mechanical polishing of the above-mentioned semiconductor substrate and liquid crystal substrate, the diameter of the substrate tends to be enlarged to ...

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Problems solved by technology

[0021] Second, when the polishing pad is flattened by dressing, the polishing pad will become irretrievably thinner, so the elastic force of the polishing pad will change, so the absorption capacity of the pressure difference generated in the surface of the substrate will change every time There is a problem that the polishing characteristics (in-plane uniformity and step relief performance) are not stable because it is different after one dressing treatment

[0022] Third, although the grinding pad must be replaced within the thickness of the grinding pad that the grinding performance can allow, the replacement of the grinding pad must be done manually, which is also one of the problems.

However, if a polishing pad that is prone to elastic deformation is used, there is still a problem that the step absorption performance on the substrate is reduced.

[0024] Fifth, although the thickness of the polishing pad attached to the fixed disk is measured by a mechanical measurement method, it is difficult to measure the thickness of the polishing pad wetted with abrasives or cleaning water.

At the same time, when the grinding process is carried out continuously, the thickness of the grinding pad cannot be measured.

In addition, in the mechanical measurement method, since ① the measurement cannot be performed at many places and the in-plane thickness distribution of the polishing pad cannot be grasped; ② the surface of the polishing pad has unevenness of about several microns, and this The measurement accuracy of the commonly used micrometer is about 10 μm, so it cannot be measured with good accuracy, so there is a problem that the amount of polishing processing and the amount of wear of the polishing pad can only be estimated based on experience.

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