Magnetic inductor and its manufacturing method

A magnetic sensor, magnetization direction technology, applied in field-controlled resistors, electromagnetic device manufacturing/processing, etc., can solve problems such as insufficiency, offset stability, etc.

Inactive Publication Date: 2004-05-19
YAMAHA CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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However, this method does not sufficiently

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  • Magnetic inductor and its manufacturing method
  • Magnetic inductor and its manufacturing method
  • Magnetic inductor and its manufacturing method

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Example

[0106] 1. The first embodiment

[0107] Fig. 1 is a plan view of a biaxial magnetic sensor using a GMR element according to a first embodiment of the present invention.

[0108] That is, the magnetic sensor 1 includes a quartz substrate 2 having a prescribed thickness and an approximately square shape, and X-axis GMR elements 11 to 14 are provided on the quartz substrate 2 to form an X-axis magnetic sensor for detecting a magnetic field in the X1 axis direction, The Y-axis GMR elements 21 to 24 are provided on the quartz substrate 2 to form a Y-axis magnetic sensor for detecting a magnetic field in the Y1-axis direction perpendicular to the X1-axis direction. Specifically, the sensing direction of the X-axis magnetic sensor is the X1-axis direction at a 45-degree angle to the X-axis direction, and the magnetic sensing direction of the Y-axis magnetic sensor is the Y1-axis direction at a 45-degree angle to the Y-axis direction.

[0109] Above, silicon can be used instead of the mat...

Example

[0185] 3. The third embodiment

[0186] The second embodiment uses a magnet array whose structure is the same as that of the magnet array used in the first embodiment in order to sufficiently adhere the permanent magnet 45 and the magnetized permanent magnet film 32. Here, the magnetization of the permanent magnet film 32 can be realized by directly using the magnet array used for the orderly heating treatment in the aforementioned second embodiment without changing the arrangement position of the magnets.

[0187] In the magnetization, a magnetic field at an angle of 45 degrees to one side of the quartz substrate 2 is established along the diagonal of the quartz substrate 2 divided in the subsequent division process. Therefore, the magnetic field acts on the permanent magnet film 32 in a direction at an angle of 45 degrees to the longitudinal direction of the permanent magnet 32, wherein the longitudinal direction of the permanent magnet film 32 is parallel to one side of the qua...

Example

[0191] 4. Fourth Embodiment

[0192] FIG. 23 shows a plan view of a magnetic sensor according to a fourth embodiment of the present invention, in which, similar to the previous embodiment, the magnetic sensor 81 of the fourth embodiment is composed of a GMR element and a permanent magnet film provided on a quartz substrate 2. Here, the magnetic sensor 81 is different from the magnetic sensor 50 in the second embodiment in that the X-axis GMR elements 51-52 of the former are arranged parallel to each other near the midpoint position of one side of the quartz substrate 2 in the negative direction of the X-axis. The axis GMR elements 63-64 are arranged parallel to each other near the midpoint of the other side of the quartz substrate 2 in the negative direction of the Y axis, thereby eliminating the effects caused by the X axis GMR elements 51-52 and the Y axis GMR elements 63-64 Sensitivity, they are basically set in the center of the quartz substrate 2 and form an angle of 45 degre...

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Abstract

A magnetic sensor comprises magnetoresistive elements (31) and permanent magnet films (32), which are combined together to form GMR elements (11-14, 21-24) formed on a quartz substrate (2) having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer (PD) of the magnetoresistive element forms a prescribed angle of 45 DEG relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.

Description

technical field [0001] The present invention relates to magnetic inductors using magnetoresistive elements such as giant magnetoresistance (GMR) elements. The invention also relates to a manufacturing method for manufacturing a magnetic inductor. Background technique [0002] In general, various types of magnetic sensors using magnetoresistive elements such as giant magnetoresistance (GMR) elements have been gradually developed and put into practical use. [0003] Typical examples of the GMR element include a pinned layer whose magnetization is pinned in a prescribed direction, and a free layer whose magnetization direction changes according to an external magnetic field. That is, when an external magnetic field is applied, the GMR element exhibits impedance in response to the relative relationship of magnetization directions between the pinned layer and the free layer; therefore, the external magnetic field can be detected by measuring the impedance of the GMR element. ...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/12
Inventor 佐藤秀树相曾功吉涌井幸夫
Owner YAMAHA CORP
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