Surface acoustic wave device and its mfg. method
A surface acoustic wave device, surface acoustic wave technology, applied in the direction of semiconductor devices, electric solid-state devices, semiconductor/solid-state device components, etc., can solve the problems of high cost, high cost, and hindering the miniaturization of packaging
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no. 1 example
[0055] The first embodiment of the present invention is a duplexer having the above-described transmit filter 10a and receive filter 10b. This duplexer has the same structure as the duplexer 1 .
[0056] FIG. 7A is a perspective view of the duplexer 20 of the present embodiment, Figure 7B It is a cross-sectional view along the line A-A of FIG. 7A. In these figures, those parts that are the same as those shown in the previously described figures have the same reference numerals.
[0057] The duplexer 20 has a circuit board 23 on which the SAW chip 10 is flip-chip mounted so that the main surface of the SAW chip 10 faces the die attach surface of the circuit board 23 . The SAW chip 10 is hermetically sealed in the cavity 8 of the cap 22 .
[0058] The circuit board 23 can be manufactured by processing a substrate containing silicon as a main component. Silicon is easy to handle and inexpensive. 8A and 8B may be formed in or on circuit board 23 by RIE (including deep RIE), ...
no. 2 example
[0071] Figures 10A to 10C and Figure 11 A duplexer 30 according to a second embodiment of the invention is shown. More specifically, Figure 10A is a cross-sectional view of the duplexer 30 (the cross-sectional view is the same as Figure 7B Corresponding to the sectional view of ), Fig. 10B is a plan view of circuit board 33, Figure 10C It is a sectional view along the line C-C shown in FIG. 10B. The duplexer 30 has almost the same perspective view as that shown in FIG. 7A.
[0072] Such as Figure 10A As shown, the duplexer 30 has a circuit board 33 comprising silicon as a main component. The SAW chip 10 is flip-chip mounted on the die attach surface of the circuit board 33 . The SAW chip 10 is housed in the cavity 8 of the cap 32 and hermetically sealed by the cap 32 .
[0073] A metal layer, which may be made of gold or the like, is provided at the bonding surface of the cap 32 and the circuit board 33 . The sealing cap 32 and the circuit board 33 are joined by...
no. 3 example
[0078] Figure 12A and Figure 12B A duplexer 40 according to a third embodiment of the invention is shown. More specifically, Figure 12A is a cross-sectional view of duplexer 40 (the cross-sectional view is the same as Figure 7B Corresponding to the sectional view of the), Figure 12B is a plan view of the cap 42 on which the SAW chip 10 is bonded.
[0079] A cavity 48 is defined in the circuit board 43 on which the cap 42 having a flat plate shape is bonded. The SAW chip 10 is bonded to the cap 42 . The circuit board 43 may be a silicon substrate. Similarly, cap 42 may be a silicon substrate. Cap 42 may also be a sapphire substrate. Hereinafter, a silicon substrate is used.
[0080] Metal layers 42 a and 43 a are formed on the bonding surfaces of the cap 42 and the circuit board 43 . The metal layers 42a and 43a may be formed of a single conductive layer containing at least one of Au, Al, Cu, Ti, Cr, and Ta, or formed of a stack of a plurality of conductive layer...
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