Unlock instant, AI-driven research and patent intelligence for your innovation.

Electric power semiconductor device

A technology for power semiconductors and semiconductors, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of satisfying the binding force, unable to effectively apply the fixing part, etc., and achieve the effect of preventing peeling

Inactive Publication Date: 2005-02-02
MITSUBISHI ELECTRIC CORP
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the rigidity of the fixing part is low and the binding force is not good, it will resonate with the ultrasonic vibration during fixing, and the ultrasonic energy may not be effectively applied to the fixing part.
[0009] In particular, from the viewpoint of manufacturing shape process and miniaturization requirements, the inner lead needs to reduce the thickness of the lead wire. In addition, it is necessary to fix it only from the top and bottom, from the viewpoint of manufacturing and stability. Problems such as the inability to fully satisfy the binding force in the direction of the plane

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electric power semiconductor device
  • Electric power semiconductor device
  • Electric power semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Embodiments of the present invention will be described below with reference to the drawings. However, the same reference numerals are assigned to common elements in each figure, and overlapping explanations are omitted. The basic form of the power semiconductor device related to the present invention has the following structure, that is, the main terminal lead is a single body that is integrally constituted by the inner lead part to which the solder wire is fixed and the outer lead part for external connection, and the outer lead part is molded from a molded resin. Exposed to the outer side, a plurality of welding wires are fixed in parallel on the plurality of wire fixing parts on the inner lead part, corresponding to the wire fixing part formed on the inner lead part at the position near the outer side, and the arrangement of the wire fixing parts A plurality of through holes penetrating through the main terminal lead are formed substantially parallel to the direction...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A main lead ( 2 ) is a single body comprised of an inner lead ( 2 a) and an outer lead ( 2 b) which are integrally formed, the bonding wires are arranged in parallel and fixed onto the inner lead ( 2 a) by the wire bonding portions ( 3 b), and the outer lead are exposed from the mold resin to the outside for electrical connection, and a plurality of through holes ( 8 ) penetrating the main terminal lead are formed in the outer vicinity of the wire bonding portions ( 3 b) within the inner lead ( 2 a), and the through holes are arranged substantially in parallel to the arrangement direction of the wire bonding portions ( 3 b) so as to correspond to the entire wire bonding portions ( 3 b).

Description

technical field [0001] The present invention relates to a power semiconductor device for controlling large current, in particular to a power semiconductor device that uses a plurality of welding wires to connect a group of power semiconductor elements and internal leads. Background technique [0002] Conventionally, in power semiconductor devices sealed with molded resin, the main terminal (or also called "lead") for taking out the main current from semiconductor elements such as IC chips has a structure in which the inner lead and the outer lead are integrally formed. , the main terminal is screwed to the outer substrate or a wiring part such as a bus bar in the external lead, and the main current is controlled according to the voltage applied to the gate from the external control circuit through the gate terminal. Here, the welding wire used for electrical connection from the power semiconductor element arranges a plurality of aluminum wires with a diameter of φ100 to 500 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L21/607H01L23/495H01L23/50H01L23/28H01L25/04
CPCH01L2224/85205H01L2224/45124H01L2924/01082H01L2924/00014H01L2924/01004H01L2924/01002H01L24/85H01L23/49562H01L2924/01029H01L2224/48472H01L2924/014H01L2924/01013H01L24/49H01L2924/18301H01L2224/45147H01L23/49541H01L2224/45015H01L2924/2076H01L24/45H01L24/48H01L2924/01079H01L2224/48463H01L2924/01068H01L2224/48247H01L2924/14H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/0102H01L2924/01078H01L2224/49111H01L2224/45144H01L2224/49175H01L2924/181H01L2224/05552H01L2224/0603H01L2224/05554H01L2224/78H01L2924/00H01L2924/00012H01L25/04
Inventor 菊池正雄中岛泰鹤迫浩一吉原邦裕
Owner MITSUBISHI ELECTRIC CORP