Unlock instant, AI-driven research and patent intelligence for your innovation.

RF amplifier and related module and method

A technology of radio frequency amplifiers and amplifiers, applied in high frequency amplifiers, improved amplifiers to reduce nonlinear distortion, improved amplifiers to reduce temperature/power supply voltage changes, etc., can solve problems such as being unable to be accessed by customers, and achieve high bias connections, Simple bias connection, area reduction effect

Inactive Publication Date: 2010-05-26
AMPLEON NETHERLANDS
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, the differential frequency does not need to be decoupled by DC blocking capacitors
Also, the shunt inductor is a separate device from the transistor and cannot be accessed by the customer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • RF amplifier and related module and method
  • RF amplifier and related module and method
  • RF amplifier and related module and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] figure 2 Indicates an arrangement according to the invention. A radio frequency amplifier arrangement 22 is shown, comprising an active die having a semiconductor amplifier element 24 and a DC blocking capacitor 26 . The active chip 24 is connected to the DC blocking capacitor 26 via the connecting wire 28 . The DC blocking capacitor 26 is connected to the power connection layer 36 via the connection line 32 .

[0051] The active chip 24 is connected to a matching circuit 30 via a connection line 40 . The power connection layer 36 is connected to one side of the decoupling capacitor 38 . The other side of the decoupling capacitor 38 is grounded 34 . Connection line 28 and DC blocking capacitor 26 form an internal shunt inductor circuit. The DC blocking capacitor 26 is RF shorted. This means that any circuit can be connected to the DC blocking capacitor 26 without affecting the operation of the RF matching circuit 30 . The active chip 24 is connected to a matchin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A RF amplifier device (22) including an amplifier element (24) compensated by a compensating circuit (26, 28) with respect to its output capacitance and frequency decoupled from its power supply (26),wherein the decoupling circuit is directly connected to the compensating circuit (26, 28) and a RF amplifier device including an amplifier element (56, 80) and a compensating circuit comprising an internal shunt inductor having a compensating inductance (58, 60, 62) and a compensating capacitance (64, 92) and arranged in parallel to a terminal of the amplifier element (56, 80) to compensate a terminal capacitance of the amplifier element (56, 80), and a decoupling and power supply lead (76, 98) which is connected to the compensating capacitance (64, 92) and / or a decoupling circuit (100) and / or a combination of the compensating capacitance and the decoupling circuit (130) and a module thereof and a method for decoupling the mentioned RF amplifier device.

Description

technical field [0001] The invention relates to a radio frequency amplifier device comprising amplifier elements having a frequency dependent gain, said frequency dependence being caused by input and / or output capacitances, said frequency dependence being compensated by a compensating circuit. Background technique [0002] Telecom operators have transmitters or base stations in scenic spots, so everyone can use her or his own phone anywhere. These base stations include amplifiers. These amplifiers amplify digital signals modulated on a high frequency carrier (1 or 2 GHz). The result is an extremely complex signal with a complex spectrum. For example, GSM, fringe GSM, and CDMA are all standards used to transfer data between base stations and mobile phones. After these systems, a wideband CDMA signal was used, called W-CDMA. Data processing in W-CDMA is the most complicated because the amount of data sent is enormous. [0003] If two (or more) signals with different frequ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/66H03F1/56H03F1/30H03F1/32H03F3/19
CPCH01L2223/6644H01L2924/01023H01L2223/6655H01L2924/01082H01L2924/3011H01L24/48H01L2924/01005H01L2924/01019H01L2924/01033H01L2924/01006H01L2924/01029H01L2223/665H01L2924/01074H01L23/66H01L2924/19041H01L2224/48091H01L2924/01013H01L2924/014H01L2224/49175H01L2924/30107H01L24/49H01L2924/00014H01L2224/45099H01L2224/05599
Inventor T·W·巴克
Owner AMPLEON NETHERLANDS