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Resonator, filter and fabrication of resonator

A resonator and filter technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, etc. Adequate adjustment of the resonator resonant frequency filter center frequency, increased production costs, increased manufacturing steps, etc.

Active Publication Date: 2005-10-05
TAIYO YUDEN KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem with this method is that the surface of the electrode is activated, chemically reacts with the oxygen present and oxidized during the fabrication of the thin film electrode
Poor film adhesion between this native oxide film and the above newly added film
The problem is that it is difficult to obtain good resonance characteristics and achieve high-precision adjustment
In addition, although only a small number of resonators among multiple resonators formed on a single substrate need to have a thick upper electrode film, this still requires additional manufacturing steps and increases production costs
[0015] As mentioned above, none of the conventional Δf adjustment methods can sufficiently adjust the resonant frequency of the resonator as well as the center frequency of the filter

Method used

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  • Resonator, filter and fabrication of resonator
  • Resonator, filter and fabrication of resonator
  • Resonator, filter and fabrication of resonator

Examples

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no. 1 example

[0041] 1A to 1C show a piezoelectric thin film resonator according to a first embodiment of the present invention. Fig. 1A is a plan view. 1B and 1C are cross-sectional views taken along line A-A shown in FIG. 1A. The piezoelectric thin film resonator shown in FIGS. 1A to 1C can be used as a series branch resonator or a parallel branch resonator of a filter having a ladder structure.

[0042] The piezoelectric thin film resonator includes: a substrate 11 made of a silicon substrate, a lower electrode film 12 , a piezoelectric film 13 made of ALN, and an upper electrode film 14 made of Ru. The lower electrode film 12 has a two-layer structure (Ru / Cr) in which a Ru film 12a and a Cr film 12b are laminated. The first adjustment film 15 is provided on the upper electrode film 14 . Set on the first adjustment film 15 made of SiO 2 The second adjustment film 16 is produced. Made of SiO 2 The produced second adjustment film 16 is also provided on the portion of the substrate 11...

no. 3 example

[0073] 14A to 14C show a piezoelectric thin film resonator according to a third embodiment of the present invention. 14A is a plan view of the resonator, and FIGS. 14B and 14C are cross-sectional views along line A-A shown in FIG. 14A. The piezoelectric thin film resonator in this embodiment can be used as a series branch resonator or a parallel branch resonator.

[0074] The piezoelectric thin film resonator includes a silicon substrate 101, a lower electrode film 102, a piezoelectric film 103 made of AlN, and an upper electrode film 104 made of Ru. The lower electrode film 102 has a two-layer structure (Ru / Cr) in which a Ru film 102a and a Cr film 102b are laminated. In the overlapping region where the upper electrode film 104 and the lower electrode film 102 face each other across the piezoelectric film 103, a layer made of SiO 2 The manufactured first adjustment film 105. Set on the first adjustment film 105 made of SiO 2 The second adjustment film 106 is manufactured....

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Abstract

A resonator includes a piezoelectric thin-film provided on a main surface of a substrate, a first electrode film provided on a first surface of the piezoelectric thin-film, a second electrode film provided on a second surface of the piezoelectric thin-film, a frequency adjustment film provided on one of the first and second electrode films, the frequency adjustment film comprising a film laminate including a first adjustment film provided on said one of the first and second electrode films, and a second adjustment film provided on the first adjustment film. The first adjustment film is used for Deltaf adjustment, and the second adjustment film is used for correcting frequency deviations generated in the filter manufacturing process. Thus, it is possible to accurately control the center frequency of the filter in which the multiple resonators are connected.

Description

technical field [0001] The present invention generally relates to a resonator, a filter, and a method of manufacturing a resonator, and more particularly, to a piezoelectric resonator, a high-frequency filter having the piezoelectric resonator, and a method of manufacturing the resonator. In particular, the present invention relates to the adjustment technology of the resonance frequency. Background technique [0002] With the rapid growth of wireless communication devices such as mobile phones, there is an increasing demand for filters composed of small and lightweight resonators and combinations of the above resonators. Hitherto, a SAW resonator as a piezoelectric element or a SAW filter having the SAW resonator has been used to filter a specific resonance frequency as an electric signal by utilizing surface acoustic waves (hereinafter referred to as SAW) generated on the surface of a piezoelectric material portion. Recently, piezoelectric thin film resonators and filter...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/09H01L41/187H01L41/22H01L41/253H03H3/02H03H3/04H03H9/02H03H9/17H03H9/56H03H9/58H03H9/70
CPCH03H3/04H03H9/02094H03H9/02149H03H9/174H03H9/564H03H9/568H03H2003/023H03H2003/0428H03H3/02
Inventor 横山刚西原时弘坂下武谷口真司岩城匡郁上田政则宫下勉
Owner TAIYO YUDEN KK
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