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Display device

A technology for display devices and insulating films, applied in lighting devices, electrical components, circuits, etc., can solve the problems of deterioration of transistor characteristics, unclear outline, leakage, etc., and achieve suppression of adverse effects, suppression of adverse effects, and prevention of transistor characteristics worsening effect

Inactive Publication Date: 2005-11-02
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the outline of the light-emitting region corresponding to one pixel becomes unclear with respect to the light-emitting region corresponding to a pixel because of causing stray light and causing light leakage, or due to light leakage into the transistor. The characteristics of transistors in the source layer (semiconductor layer) deteriorate, which causes problems

Method used

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Embodiment approach 1

[0033] The cross-sectional structure of the bottom emission type display device according to the present invention, which is roughly divided into four cases, will be described with reference to the accompanying drawings. Further, in this embodiment mode, although it is preferable to form the first insulating film 12 having a barrier property on the transistor as much as possible, it may be omitted. When the first insulating film 12 is omitted in one aspect of the present invention, the "second insulating film 13" and "third insulating film 14" described later should be changed to "the first insulating film 13" and "the third insulating film 14" accordingly. The second insulating film 14".

[0034] The display device of the first structure includes a transistor 11 including source and drain regions 15 and 16 formed over a substrate 10 , a first insulating film 12 formed on the transistor 11 , a first insulating film 12 having a The second insulating film 13 of light shielding ...

Embodiment approach 2

[0067] The cross-sectional structure of the dual emission type display device according to the present invention, which is roughly divided into four cases, will be described with reference to the accompanying drawings. Further, in this embodiment mode, although it is preferable to form the first insulating film 12 having a barrier property on the transistor as much as possible, it may be omitted. When the first insulating film 12 is omitted in one aspect of the present invention, the "second insulating film 13" and "third insulating film 14" described later should be changed to "the first insulating film 13" and "the third insulating film 14" accordingly. The second insulating film 14".

[0068] The display device of the fifth structure includes a transistor 11 formed over a substrate 10, a first insulating film 12 formed over the transistor 11, a second insulating film 13 having a light shielding property formed over the first insulating film 12, A first opening provided in ...

Embodiment approach 1

[0102] The following will refer to Figure 3A and 3B The structure of the display device according to the present invention is described. The display device of the present invention includes a plurality of pixels 310, and each pixel is insulated between the source line Sx (x is a natural number, which satisfies 1≤x≤m) and the gate line Gy (y is a natural number, which satisfies 1≤y≤n) through insulation Multiple components are included in the area where the material intersects (see Figure 3A ). Each pixel 310 includes a light emitting element 313, a capacitive element 316, and two transistors. One of the two transistors is a switching transistor 311 for controlling the video signal input to the pixel 310 , and the other is a driving transistor 312 for controlling ON / OFF of the light emitting element 313 on / off. The capacitive element 316 has a role of holding the gate-source voltage of the transistor 312 . Furthermore, the capacitive element 316 may be eliminated. More sp...

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Abstract

When light generated in a light emitting layer of a display device is emitted through insulating films such as a planarizing film, an interlayer insulating film and a gate insulating film of a transistor, diffused reflection is caused due to slight-rough surfaces of the insulating films every time light passes through each insulating film. Accordingly, problems are caused in which stray light is caused, an outline of a pixel becomes indistinct, and a characteristic of the transistor is deteriorated. A display device according to the invention includes a transistor formed over a substrate, an insulating film with a light shielding property formed on the transistor, an opening for transmitting light therethrough formed in the insulating film with the light shielding property, and a light emitting element formed overlapping the opening.

Description

technical field [0001] The present invention relates to a display device having a light emitting element. Background technique [0002] In recent years, display devices having light emitting elements represented by EL (Electroluminescence) elements (especially organic EL elements) have been developed. By taking advantage of the benefits of high image quality, wide viewing angle, thin shape, light weight, and the like brought about by the self-light-emitting type, wide application of display devices having light-emitting elements has been anticipated. The light emitting element includes being formed by stacking an anode, a light emitting layer, and an anode over a substrate. For example, when an anode is formed on one side of a substrate, a so-called bottom emission type display device is known in which the anode is transparent and emits light generated from a light emitting layer to the substrate (refer to Patent Document 1). [0003] [Patent Document 1] Japanese Patent Ap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/32H01L51/52H05B33/00H05B33/22H05B44/00
CPCH01L27/3244H01L51/5284H10K59/126H10K59/8792H10K50/865H10K59/12
Inventor 山崎舜平
Owner SEMICON ENERGY LAB CO LTD
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