Semiconductor laser assembly
Patent Information
- Authority / Receiving Office
- CN Β· China
- Current Assignee / Owner
- SONY CORP
- Publication Date
- 2005-11-02
- Estimated Expiration
- Not applicable Β· inactive patent
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Abstract
Description
technical field
[0001] The present invention relates to a laser diode device having a structure that, when welding a laser diode device to a heat sink, there is a base therebetween, or welding is performed directly.
[0002] Specifically, the present invention relates to a laser diode device including a structure in which overflow of solder in a solder soldering surface between a laser diode device and a submount or a heat sink is suppressed, and the overflow solder does not Globs of solder residue form on laser diode devices, submounts, or heat sinks. Background technique
[0003] In a laser diode device, when converting electrical energy into light energy, energy losses are emitted, and this energy loss is converted into heat energy. This thermal energy increases the temperature of the laser diode and has an adverse effect on the laser properties.
[0004] In order to instantly diffuse the thermal energy generated in the laser diode device and enhance the mechanical stre...