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Plasma processing system and method

A technology of plasma and processing systems, applied in particle and sedimentation analysis, measuring devices, instruments, etc., can solve problems such as device damage and yield reduction

Inactive Publication Date: 2005-12-28
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During wafer processing, these particles, ranging in size from sub-micron to more than a few millimeters in size, can deposit on the surface of the wafer where the device is to be fabricated, causing damage to the device and reducing yield

Method used

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  • Plasma processing system and method
  • Plasma processing system and method
  • Plasma processing system and method

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Embodiment Construction

[0019] figure 1 A specific embodiment of a plasma processing system according to the principles of the invention is shown. The plasma processing system - indicated by 10 - is connected to a measurement system 12 and a magnetic field generator 38, both of which are exemplarily shown in figure 1 middle. Measurement system 12 is used to measure the particle concentration in plasma system 10, as will be described in more detail below.

[0020] Plasma processing system 10 includes a plasma processing chamber, indicated at 14 , defining a plasma processing region 16 in which plasma 18 may be generated. A chuck or electrode 30 is located in the reaction chamber 14 and is constructed and arranged to support a substrate 20 , which may be, for example, a semiconductor wafer, in the processing area 16 of the reaction chamber 14 . Substrate 20 may be, for example, a semiconductor wafer, an integrated circuit, a sheet of polymer material to be covered, a metal to be surface hardened by ...

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Abstract

A plasma processing system includes a magnetic field generator capable of generating a magnetic field and a thin curtain optic capable of generating a light curtain that illuminates particles in a processing chamber of the system. The imaging device acquires image data corresponding to particles illuminated by the light curtain. Magnetic field generators, thin curtain optics, and imaging devices are placed next to each other in close proximity to the plasma. An image processor can process the image data to obtain the particle concentration in the light curtain. The method for measuring the particle concentration in the plasma processing system includes placing a magnetic field generator, a thin curtain optical element and an imaging device one by one to approach the plasma, and obtaining the particle concentration in the light curtain. Methods of minimizing particulates in the reaction chamber are also presented.

Description

[0001] This application is based upon and inherits the benefit of US Provisional Application No. 60 / 429,067, filed November 26, 2002, the contents of which are incorporated herein by reference. technical field [0002] The present invention relates to plasma processing and, more particularly, to measuring particle concentrations in plasma processing systems. Background technique [0003] Typically, a plasma is a collection of matter, some of which is gaseous and some of which is electrically charged. Plasmas are useful in certain processing systems for many applications. For example, plasma processing systems are useful in materials processing and in the fabrication and processing of semiconductors, integrated circuits, displays and other electronic devices for etching and deposition on substrates such as semiconductor wafers. [0004] In most plasma processing systems, there will be solid particles in the plasma, for example, deposits exfoliated on bellows, valves or inner...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N15/02
CPCG01N15/0227
Inventor 安德烈·S.·迈特洛维克
Owner TOKYO ELECTRON LTD