Method of fabricating a poly-crystalline silicon thin film and method of fabricating a semiconductor device using the same
A technology of polysilicon thin film and amorphous silicon thin film, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., and can solve problems such as difficult polysilicon, shedding, etc.
Inactive Publication Date: 2006-01-11
SAMSUNG ELECTRONICS CO LTD
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Problems solved by technology
However, it is difficult to perform annealing at a high energy level to obtain excellent polysilicon since the silicon film may be detached from a non-heat-resistant substrate such as a plastic substrate when annealing is performed at a predetermined or higher energy level.
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[0025] Hereinafter, a method for manufacturing a polysilicon thin film and a method for manufacturing a thin film transistor (TFT) using the method according to the present invention will be described in detail with reference to the accompanying drawings.
[0026] Figure 1A to Figure 1D is a cross-sectional view illustrating a method of manufacturing a polysilicon thin film according to the present invention. Specifically, in this method, the polysilicon film is implanted such as Si + Formed from neutral ions of ions.
[0027] refer to Figure 1A , preparing a Si wafer or a glass or plastic substrate 1 to form a polysilicon thin film. Formation of SiO on a glass or plastic substrate 1 2 oxide layer to ensure electrical insulation. If a Si wafer is used instead of the substrate 1, a native oxide can be formed thereon.
[0028] refer to Figure 1B , forming an amorphous silicon (a-Si) thin film 3 on the substrate 1 . The a-Si thin film 3 is formed by physical vapor depos...
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Abstract
The present invention provides a manufacturing method of TFT provided with a gate formed on a gate insulating layer formed on the polycrystalline silicon on which polycrystalization is performed with heat treatment, the semiconductor device containing a crystalline silicon layer and a polycrystalline silicon active layer, wherein amorphous silicon that has high energy in heat treatment can be polycrystalized, at the same time, the high quality polycrystalline silicon can be also formed on a plastics vulnerable to heat or the like, the high quality polycrystal can be formed on a heat resistant substrate like that made of silicon and glass, or on a substrate vulnerable to heat like that made of plastics, is provided.
Description
technical field [0001] The present invention relates to a kind of method of preparing polysilicon thin film and using this method to prepare the method of semiconductor device, more particularly, the present invention relates to a kind of method of preparing the polysilicon thin film of large grain size, and the method of using this method to prepare electronic device . Background technique [0002] Polycrystalline silicon (poly-Si) is applied to various electronic devices such as flat panel displays and solar cells due to its greater mobility than amorphous silicon (a-Si). [0003] Typically, polysilicon electronic devices are formed on substrates of heat-resistant materials such as glass. When a polysilicon thin film is formed on a heat-resistant substrate such as a glass substrate, an amorphous silicon film is conventionally deposited using a high temperature deposition method such as chemical vapor deposition (CVD) or plasma enhanced CVD (PECVD). The maximum size of cr...
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IPC IPC(8): H01L21/20H01L21/265H01L21/324H01L21/336
CPCH01L27/1277H01L21/2022H01L27/1296H01L21/02667H01L21/02686H01L21/02488H01L21/02422H01L21/02532H01L21/02631H01L21/02595H01L21/02381
Inventor 金道暎野口隆赵世泳权章渊
Owner SAMSUNG ELECTRONICS CO LTD