Methods and apparatus for atomic layer deposition

Abstract

Different periods of an atomic layer deposition cycle (ALD) are performed using different purge flows and, in some cases, different pumping capacities, while maintaining the reactor chamber at a nominally constant pressure. The purge flows may, in some cases, utilize different gasses and / or may be provided through different flow paths. These operations provide for ALD cycle time improvements and economical operation with respect to consumables usage. In some embodiments the use of an annular throttle valve provides a means for controlling downstream flow limiting conductances in a gas flow path from the reactor chamber.

Description

[0001] Related application [0002] This application relates to and claims priority for U.S. Provisional Patent Application No. 60 / 455,034. The application No. 60 / 455,034 is titled "Method and Apparatus for Improving Cycle Time of Atomic Layer Deposition". The filing date is 03 / 14 / In 2003, it was assigned to the assignee of this application and included in this article as a reference. Technical field [0003] The present invention relates to thin film processes, and more particularly, to methods and equipment for improving the cycle time of atomic layer deposition (ALD) processes. Background technique [0004] In the field of material deposition, a process called atomic layer deposition (ALD) as a promising option has shown the ability to expand chemical vapor deposition (CVD) technology. Generally, atomic layer deposition is a process in which the conventional CVD process is divided into a number of individual sequential deposition steps, which theoretically achieve saturation at...

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This tends to waste purge gas

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