Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetoelectronics information device having a compound magnetic free layer

An electronic information and magneton technology, applied in the field of magnetoelectronics, can solve the problem of anisotropy increasing the shape component and so on

Inactive Publication Date: 2006-05-24
EVERSPIN TECHNOLOGIES
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using higher aspect ratios also adds a shape component to the anisotropy associated with the storage elements, although some improvements have been obtained through, for example, patterning techniques with higher aspect ratios

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetoelectronics information device having a compound magnetic free layer
  • Magnetoelectronics information device having a compound magnetic free layer
  • Magnetoelectronics information device having a compound magnetic free layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The following detailed description of the invention is merely illustrative in nature and is not intended to limit the invention or the application and applications of the invention. Furthermore, there is no intention to be bound by any theory presented or implied in the preceding background of the invention or the following detailed description of the invention.

[0014] Referring to FIG. 1 , a magnetoelectronic information device 20 according to an exemplary embodiment of the present invention is shown. Although the magnetoelectronic information device 20 is a magnetoresistive random access memory (MARM), other magnetoelectronic information devices and other MRAM elements are also applicable according to the present invention, including but not limited to magnetic sensors and disk drive read / write Write head, described magnetoresistive random access memory (MARM) can be for example the U.S. Patent No. 6,545,906B1 titled "a method for writing scalable magnetoresistive r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A magnetic electronic information device (20) is provided, including two multilayer structures (24, 26) and a spacer layer (28) inserted between the two multilayer structures. Each multilayer structure has two magnetic sublayers (38, 40 and 44, 46) and a spacer layer (42, 48) interposed between the two magnetic sublayers. A spacer layer inserted between the two magnetic sublayers provides antiferromagnetic exchange coupling quantified by the saturation magnetic field. A spacer layer inserted between the two multilayer structures provides a second antiferromagnetic exchange coupling quantified by another saturating magnetic field that is smaller than the first saturating magnetic field.

Description

technical field [0001] The present invention generally relates to magnetoelectronics, and more particularly relates to a magnetoelectronic information device with a composite magnetic free layer. Background technique [0002] Magnetotronics, spin electronics, and spintronics are synonymous terms that exploit effects induced by the spin of electrons. Magnetoelectronics is used in various information devices and provides non-volatile, reliable, radiation-hardened, high-density data storage and retrieval. Many magnetoelectronic information devices include, but are not limited to, magnetoresistive access memory (MRAM), magnetic sensors, and read / write heads for disk drives. [0003] Typically, a magnetoelectronic information device such as an MRAM memory element has a structure including a plurality of magnetic layers separated by various nonmagnetic layers. The information is stored as the direction of the magnetization vector in the magnetic layer. The magnetic vectors in o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/14G11CG11C11/16H10N50/10
CPCG11C11/16H10N50/10G11C11/15
Inventor 布莱德雷·N·恩格尔
Owner EVERSPIN TECHNOLOGIES
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com