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Internal focusing ring for etching plasma

A technology of internal focusing and plasma, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems affecting the normal etching process of silicon wafer 2, and achieve the effect of preventing abnormal shedding and increasing the contact area

Inactive Publication Date: 2006-05-31
SHANGHAI HUA HONG NEC ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thus affecting the normal etching procedure of silicon wafer 2

Method used

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  • Internal focusing ring for etching plasma
  • Internal focusing ring for etching plasma
  • Internal focusing ring for etching plasma

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Embodiment Construction

[0014] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0015] see figure 1 and figure 2 As shown, an inner focus ring 5 for plasma etching of the present invention is arranged on a slide table 6, and the above slide table 6 has a protruding portion 61 on which a silicon wafer 7 that needs to be subjected to a plasma etching process is placed. The inner focusing ring 5 has a stepped structure and has a bottom edge 51 and an inner edge 52. The bottom edge 51 and the inner edge 52 form an obtuse angle of 130 degrees. The silicon wafer 7 is partly supported on the bottom edge 51 of the inner focus ring 5 and has a certain distance from the inner edge 52 . A large amount of products will be produced when the silicon wafer 7 is etched, some of these products will be sucked away by the vacuum pump, and some will be deposited on the surface of the inner focus ring 5, especially at the inner angle of the inner f...

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PUM

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Abstract

An internal focusing ring for plasma etching is arranged at periphery of chip carrying table and has bottom surface and side surface. The included angle between bottom surface and inner side surface is not right angle and a deposition slot is arranged at the include angle position for increasing the contact surface between the resultant and internal focusing ring during etching.

Description

technical field [0001] The invention relates to an etching process in the microelectronics manufacturing industry, in particular to an inner focus ring for plasma etching. Background technique [0002] In plasma etching, in order to improve the uniformity of etching, an inner focus ring is usually installed around the stage. see Image 6 As shown, the slide table 1 has a protruding portion 11, on which there is a silicon wafer 2 that needs to be subjected to a plasma etching process, and an inner focus ring 3 is arranged around the protruding portion 11, and the inner focus ring 3 is in a stepped structure with a bottom edge 31 And the inner side 32, the bottom side 31 and the inner side 32 form a right angle. The silicon wafer 2 is partly supported on the bottom edge 31 of the inner focus ring 3 and has a certain distance from the inner edge 32 . [0003] When the silicon wafer 2 is etched, a large amount of products will be produced, some of these products will be sucked...

Claims

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Application Information

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IPC IPC(8): H01L21/3065C23F4/00
Inventor 王健
Owner SHANGHAI HUA HONG NEC ELECTRONICS