System and method for identifying changing of workpiece parameter

A technology for parameter changes and workpieces, applied in electrical components, manufacturing tools, metal processing equipment, etc., to solve problems such as missing end points, weak signals, and ambiguity

Inactive Publication Date: 2006-06-28
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the signals from the interface are often weak, ambiguous, and unrecognizable, so that the end point is missed
The detection of this end-point signal is more difficult when the material layers in question have similar thermal, optical, and mechanical properties

Method used

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  • System and method for identifying changing of workpiece parameter
  • System and method for identifying changing of workpiece parameter
  • System and method for identifying changing of workpiece parameter

Examples

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Embodiment Construction

[0021] See figure 1 , the semiconductor structure has a first dielectric layer 1 and hard mask / CMP polish stop layers 2 and 3 . The interface between layer 3 and layer 2 is the interface to be detected or set as a stop point. Depending on the application, the fill material can be metal or dielectric.

[0022] The present invention is directed to the detection of CMP end points when polishing layers of chemically similar material, for example comprising a first dielectric of single damascene or dual damascene thickness (or multiple layers comprising embedded etch stop layers dielectric stack), and a multilayer spin-on or plasma-enhanced chemically vapor deposited (PECVD) CMP stop layer (or "capping layer") on the first dielectric layer "(cap layer)). The first dielectric layer may consist of the following substances: SiLK TM , GX-3 TM , Porous SiLK (TM) , GX - threesome (TM) , Black Diamond TM , NCS TM or other non-porous or porous low-k dielectric materials. The CMP...

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Abstract

The present application contemplates systems and methods for identifying changes in workpiece parameters. Specifically, a signal processing system is disclosed that collects, analyzes and differentiates with respect to field time detected mechanical, chemical, optical, electrical or thermal signals generated during chemical mechanical polishing (CMP) to reveal Different stages during CMP for process control and end point determination. Such a control and / or end point determination scheme may be used to detect an interface between two material layers having similar properties, such as the interface of a low-k dielectric stack for a semiconductor.

Description

technical field [0001] The technical field of the invention is the chemical mechanical polishing of materials, in particular the chemical mechanical polishing of integrated circuit wafers. Background technique [0002] Chemical-mechanical polishing or planarization (CMP) has been a capable processing technique for IC fabrication since its inception. Achieving CMP in a manufacturing environment requires the ability to monitor the process and set an end-point (EP) for it before it corrodes into the metal or dielectric below the layer that would otherwise be removed. [0003] The CMP process is used to manufacture high-speed microprocessors, application-specific integrated circuits (ASICs), micro-electromechanical systems (MEMS), and other IC or MEMS devices. The present invention proposes a set of simple and precise algorithms to process raw physical signals from polishing events into recognizable, repeatable, high-resolution symbols that provide end-point control for the CMP...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04H01L21/304
CPCB24B37/013
Inventor 欧格内·J·奥苏利文绍姆·S·伯诺斯曾伟志
Owner IBM CORP
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