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Diamond transistor and production thereof

A production method and diamond technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low power and frequency, and achieve the effects of high power characteristics, long service life, and high frequency

Inactive Publication Date: 2006-08-16
SHANDONG IZUMI SHUN ELECTRONICS TECH CO LTD
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AI Technical Summary

Problems solved by technology

[0002] At present, it is generally recognized that diamond has no conductivity. However, due to its high temperature resistance, this field tries to make it into a transistor to meet the needs of certain industries. In recent years, diamond transistors reported abroad are all coated on the surface of diamond. Cover with a thin film to meet the requirements of electrical conductivity. Although this kind of diamond transistor has good high temperature resistance, its power and frequency are low, which cannot meet the requirements of special industries, especially those used in national defense.

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  • Diamond transistor and production thereof
  • Diamond transistor and production thereof
  • Diamond transistor and production thereof

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Embodiment Construction

[0011] The product of the present invention comprises a metal shell 1, a diamond body 2 is coated in the metal shell 1, and a gold drain S, an aluminum grid G ​​and a gold source D are respectively arranged on the surface of the diamond body 2, and the diamond body 2 There is a field effect layer on the surface. The diamond body 2 of the product of the present invention shown in the figure is that one side is provided with a drain electrode S made of gold, an aluminum grid G ​​and a source electrode D made of gold. Drain S made of gold, gate G made of aluminum and source D made of gold. The diamond body 2 of the present invention is rectangular, and the thickness of the diamond body 2 is usually 0.5-3.5 millimeters. In order to reduce the cost, the thickness of the diamond body 2 is thinned as much as possible under the premise of ensuring product quality and manufacturing process requirements. It can be 0.5 mm, 3.5 mm, 1 mm, 1.2 mm, 1.5 mm, 2 mm, 2.5 mm and 3 mm, etc. Of cou...

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Abstract

The diamond transistor consists of a metal shell covering a diamond body whose surface a golden-made drain electrode S, an aluminum-made grid electrode G and a gold-made source electrode D are respectively located. There is a field effect layer on the surface of diamond. It is unnecessary to covering a layer of film on the diamond surface in order to make it have property of good electric conductance and high power at the condition of having high temperature resistance.

Description

technical field [0001] The invention relates to a transistor, which is a diamond transistor and a manufacturing method thereof. Background technique [0002] At present, it is generally recognized that diamond has no conductivity. However, due to its high temperature resistance, this field tries to make it into a transistor to meet the needs of certain industries. In recent years, diamond transistors reported abroad are all coated on the surface of diamond. Cover with a thin film to meet the requirements of electrical conductivity. Although this kind of diamond transistor has good high temperature resistance, its power and frequency are low, which cannot meet the requirements of special industries, especially those used in national defense. Contents of the invention [0003] The object of the present invention is to provide a diamond transistor and its manufacturing method, which does not need to coat the diamond surface with a film, so that it has good high temperature re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/772H01L21/335
Inventor 李西勤赵仕忠
Owner SHANDONG IZUMI SHUN ELECTRONICS TECH CO LTD
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