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Stripping and cleaning compositions for microelectronics

一种清洁组合物、组合物的技术，应用在防腐组合物、洗涤剂组合物、有机洗涤组合物等方向，能够解决增加时间、安全考虑环境后果和成本等问题

Inactive Publication Date: 2006-09-27
AVANTOR PERFORMANCE MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This intermediate rinse (often using isopropanol) adds undesirable time, safety concerns, environmental consequences and cost to the manufacturing process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-5

[0019] Ammonium hypophosphite, deionized water (DI water), and 50:1 HF were mixed to obtain a solution of 2% by weight ammonium hypophosphite, 98% by weight water, and 100 ppm fluoride ion to provide the cleaning composition of the present invention. The pH of the solution was 4.3. A given mass of this solution was placed in a beaker and heated to 45°C. A patterned silicon wafer sample with a TiN / Al / TiN / PTEOS layer was placed in the heated solution for a predetermined time and then removed. Rinse in DI water and blow dry with nitrogen. Scanning electron micrographs (SEM) of cleaned wafer samples were taken and evaluated for ash removal and aluminum metal corrosion. The results in Table 1 demonstrate the cleaning and relatively non-corrosive properties of the compositions of the present invention.

[0020] Example number

Embodiment 6-10

[0022] The solutions used in Examples 1-5 were also used in Examples 6-10 below. The wafers used in Examples 6-10 were the same type of wafers used in Examples 1-5 with vias patterned on top of the TiN bottom layer by PTEOS stopping. The cleaning solution was the same as in Examples 1-5. The wafer was placed in the heated (45°C) solution for a predetermined time and then removed. Rinse in DI water and blow dry with nitrogen. Scanning electron micrographs (SEMs) of cleaned wafer samples were taken and evaluated for ash removal and aluminum metal corrosion. The results reported in Table 2 show that the aggressive nature of the compositions of the invention increases when longer wash times are used.

[0023] Example number

Embodiment 11-12

[0025] The same type of patterned wafer as used in Examples 1-5 was used in Examples 11 and 12. The cleaning solution used was that used in Examples 1-5, but to which glycerol was added, in an amount constituting approximately 10% by weight of the composition. The pH of the solution was still 4.3. The wafers were placed in the heated (45°C) solution for a predetermined period of time before being removed, rinsed in DI water and blown dry with nitrogen. Scanning electron micrographs (SEM) of cleaned wafer samples were taken and evaluated for ash removal and aluminum metal corrosion. The results are reported in Table 3 and show a further reduction in aluminum corrosion of about 10%.

[0026] Example number

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PUM

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Abstract

Aqueous cleaning compositions and method of using the cleaning compositions for cleaning microelectronic substrates, which compositions are able to essentially completely clean such substrates and produce essentially no metal corrosion of the metal elements of such substrates. The aqueous cleaning compositions of this invention have (a) water, (b) at least one of ammonium and quaternary ammonium ions and (c) at least one of hypophosphite (H2PO2<->) and / or phosphite (HPO3<2->) ions. The cleaning compositions also may contain fluoride ions. Optionally, the composition may contain other components such as organic solvents, oxidizing agent, surfactants, corrosion inhibitors and metal complexing agents.

Description

technical field [0001] The present invention relates to methods and aqueous cleaning compositions for cleaning post-etch and / or photoresist ash residues for cleaning microelectronic substrates. The compositions of the present invention enhance metal protection, ie, corrosion inhibition, when such microelectronic substrates are subjected to cleaning and subsequent water rinsing. Background technique [0002] In the microelectronics field, a number of photoresist strippers and residue removers have been proposed as downstream or back end cleaners of the production line. A thin film of photoresist is deposited on a substrate material during the manufacturing process, and a circuit pattern is then imaged on the film. After baking, the exposed resist is removed with a photoresist developer. The resulting image is then transferred to the underlying material, typically a dielectric or metal, by plasma etchant gas or chemical etchant solution. The etching gas or chemical etchant ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42H01L21/00C11D11/00C11D7/04C11D7/32C11D7/06H01L21/02
CPCC11D7/10C11D3/046C11D11/0047G03F7/425C11D7/32C11D7/3209C11D3/0073G03F7/426H01L21/02071H01L21/02063H01L21/6704C11D3/30C11D2111/22C11D7/04C11D7/06C11D1/62
Inventor 约瑟夫·M·伊拉尔迪戴维·C·斯基肖恩·M·凯恩卡伦·E·特罗瓦利
Owner AVANTOR PERFORMANCE MATERIALS LLC
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