Method for manufacturing metal coupling
A metal bump, metal technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as reducing product reliability, affecting packaging quality, and the anisotropic conductive adhesive film 24 is not uniform enough, etc. Achieve the effect of improving quality, improving joint effect, and reducing step height
Inactive Publication Date: 2006-10-04
UNITED MICROELECTRONICS CORP
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Problems solved by technology
In this way, when the metal bump 20 is bonded to a packaging substrate 22, because of the step height of the periphery of the metal bump 20, it is very easy to partially coat the surface between the metal bump 20 and the packaging substrate 22 interface. The anisotropic conductive adhesive film 24 cannot reliably bond the metal bump 20 to the packaging substrate 22
[0005] It can be seen from the above that if the step height of the metal bump 20 is too large, the quality of the package will be seriously affected. However, if there is no step height of the metal bump 20, the anisotropic conductive adhesive film 24 cannot be properly sealed Gather on the surface of the metal bump 20
Known technology usually utilizes two methods to improve this problem, the first method is to thin the thickness of protective layer 18 deposition, but this method will greatly reduce the reliability of the product
The second method is to reduce the bonding pad metal 12, but this method will reduce the bonding area and cause the anisotropic conductive adhesive film 24 to be uneven.
Method used
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[0013] refer to Figure 2 to Figure 7 , Figure 2 to Figure 7 It is a schematic diagram of the method for manufacturing the metal bump 48 according to the first embodiment of the present invention. Such as figure 2 As shown, a substrate 30 is firstly provided, and the substrate 30 can be a chip with internal components and circuits fabricated or a multilayer printed circuit board with internal circuit layout completed. The surface of the substrate 30 includes at least one pad metal 32 , an oxide layer 34 and a silicon nitride 36 . The bonding pad metal 32 is made of aluminum, and the oxide layer 34 and silicon nitride 36 combine to form a patterned protective layer 38 , the protective layer 38 covers part of the surface of the bonding pad metal 32 and exposes part of the surface of the bonding pad metal 32 . The oxide layer 34 and the silicon nitride 36 are respectively formed on the surface of the substrate 30 and the pad metal 32 through a deposition process. In this em...
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The invention provides a method for making mental projection, which comprises the following steps: providing a surface which comprises a base of a protecting layer and the protecting layer exposes at least one joint pad mental surface, forming a photo resist cover the base surface, doing the etch process to paten the exposed part protecting layer and the joint pad mental, disposing part of the protecting layer, disposing the photo resist layer and doing a mental projection process.
Description
technical field [0001] The invention relates to a method for manufacturing a metal bump, in particular to a method which can improve the step height of the metal bump periphery and increase the packaging quality. Background technique [0002] With the development of portable electronic devices, various light, thin, and short packages are continuously developed, and the flip-chip ball grid array (BGA) package is one example. In a flip chip BGA package, the die (die) is no longer connected to the package substrate by bonding pad metal (bonding pad) via wire bonding, but reversed through gold bumps or conductive polymer bumps, etc. Connected to the package substrate, so the flip-chip BGA package can increase circuit density and improve electrical characteristics. [0003] Flip-chip bonding belongs to area array bonding, so it can be applied to extremely high-density packaging. To put it simply, the concept of flip-chip bonding is to first grow metal bumps on the bonding pad m...
Claims
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Login to View More IPC IPC(8): H01L21/28H01L21/44H01L21/768H01L21/60
CPCH01L24/11H01L2224/11H01L2924/00012
Inventor 刘美贞赖昱廷李光兴董明宗
Owner UNITED MICROELECTRONICS CORP