Wafer for evaluation, evaluation method and method of manufacturing semiconductor device

Abstract

The present invention relates to a wafer for evaluation, a method for evaluating ion implantation amount distribution, and a method for manufacturing a semiconductor device. Using a wafer 2, a plurality of evaluation transistor formation regions 4 having the same impurity concentration are arranged in an equal-density distribution over the entire main surface of the wafer 2, and threshold voltage control is performed in the evaluation transistor formation regions 4 of the wafer 2. Impurity implantation, as the impurity implantation to be evaluated, formed evaluation transistors of the same structure in each evaluation transistor formation region 4, measured the threshold voltage of the evaluation transistors, and evaluated the evaluation transistors based on the threshold voltage distribution of the evaluation transistors. impurity concentration distribution in the main surface of the wafer. The amount of ion implantation is not limited, and the distribution of ion implantation amount in the semiconductor wafer surface can be evaluated in detail.

Description

technical field [0001] The present invention relates to a wafer for evaluation or inspection, and more specifically, to a wafer for evaluating ion implantation amount distribution, a method for evaluating ion implantation amount distribution, and a method for manufacturing a semiconductor device for evaluating when implanting ions into a semiconductor wafer. The resulting in-plane ion implantation amount distribution deviation. Background technique [0002] In order to reduce the size of the semiconductor chip, it is important to reduce the variation in the amount of ion implantation to a minute region within the surface of the semiconductor wafer by producing a product that utilizes analog characteristics. As a method of measuring ion implantation amount distribution (impurity concentration distribution) in the surface of a semiconductor wafer, for example, a method using sheet resistance, such as JP-A-10-172917 (hereinafter abbreviated as "Patent Document 1") is exemplifie...

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Problems solved by technology

[0006] When the injection density ratio is 1.0×10 12 ions / cm 2 Small occasions, the method utilizing thermal waves can also measure the ion implantation amount, but there are limitations in using this method, generally only hundreds of points can be measured in the semiconductor wafer plane, and the ion implantation amount distribution in the semiconductor wafer plane cannot be measured in detail

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