Semiconductor laser device and method for fabricating the same

Abstract

To provide a semiconductor laser, i.e. a monolithic integrated laser such as a two wavelength laser, having a good window region formed in each region near the exit end face of an active layer by single step for diffusing impurities, and to provide its fabrication process. The semiconductor laser comprises an element of first wavelength having a first conductivity type first clad layer, a first active layer having a first window region near the exit end face, and a second conductivity type first clad layer formed on a substrate sequentially in ascending order, and an element of second wavelength having a first conductivity type second clad layer, a second active layer having a second window region near the exit end face, and a second conductivity type second clad layer formed sequentially in ascending order. Lattice constants of the second conductivity type first clad layer and the second conductivity type second clad layer are constants adjusted to compensate for the difference in diffusion rate of impurities contained in the first window region of the first active layer and impurities contained in the second window region of the second active layer.

Description

technical field [0001] The present invention relates to semiconductor laser devices, in particular to DVD-RAM, DVD-R, DVD-RW, DVD+R, DVD+RW, CD-R, CD-RW, DVD-ROM, CD-ROM, DVD-Video Optical disc devices such as CD-DA and VCD, semiconductor laser devices used in information processing, optical communication, and optical measurement, and their manufacturing methods. Background technique [0002] Semiconductor laser devices are used as light sources for reading and writing of optical disc devices, and as light sources for optical information processing, optical communication, and optical measurement. For example, an AlGaInP-based red laser light with a wavelength of about 650 nm is used as a read / write light source for reading or writing to a DVD-RAM. Also, for example, an AlGaAs-based infrared laser with a wavelength of about 780 nm is used as a read / write light source for reading or writing a CD-R. [0003] In order to cope with both DVD-RAM and CD-R, one drive must have bot...

AI Technical Summary

Problems solved by technology

Due to the above, the temperature in the region near the emission edge surface of the active layer rises to the melting point of the crystals constituting each semiconductor layer, so that the part of the region near the emission edge surface of each semiconductor layer melts, causing the laser emission operation to stop.

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