Data cut-off protection and repairing method of inlaid apparatus

An embedded device and power-failure protection technology, which is applied in the direction of data error detection and response error generation, can solve the problems of increasing product cost and wasting storage space, so as to improve the utilization rate and repair The effect of shortening the process time and improving the repair speed

Inactive Publication Date: 2007-03-28
KONKA GROUP
View PDF0 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The most obvious problem with this type of method is that the already tight storage space is wasted,

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data cut-off protection and repairing method of inlaid apparatus
  • Data cut-off protection and repairing method of inlaid apparatus
  • Data cut-off protection and repairing method of inlaid apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The data power-down protection and repair method of an embedded device of the present invention is not only applicable to the data access method built on the file system, but also applicable to the data access method of directly operating the storage device, and the storage device includes a flash memory, a magnetic disk, a micro Hard disk, SD / MMC and other memory cards.

[0019] The data power-down protection method of the embedded device of the present invention is as follows: the operation step of modifying data is divided into steady state and transient state, the atomic operation belongs to the steady state, and the last step of the multi-step operation is in the steady state; The operation is transient; a mark is attached to each step of data operation, and the mark is written after the operation is completed; when the last step of the multi-step operation is completed, the transient mark of its forward-tracking operation is rewritten as a steady state mark; power-...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention discloses a data protecting method for embedded device. It consists of the following steps: divide the operation of data modification to stable status and temporary status; add a marker to each operation step and read in this marker when operation finish; the temporary status marker of the former operation was rewritten to be stable status marker when the last step in the multi step operation finish; startup, scan all the data, abandon unfinished action (temporary status operation marker) and come back to the former status. This invention could increase data repair speed.

Description

technical field [0001] The invention relates to a data access technology of an embedded device, in particular to a method for protecting and restoring data in view of frequent power failures of the embedded device. Background technique [0002] Embedded systems are application-centric, based on computer technology, and the software and hardware can be tailored. They are suitable for special-purpose computer systems that have strict requirements on function, reliability, cost, volume, and power consumption, and are used to implement specific applications. Features. Common embedded products using embedded systems include mobile phones, PDAs, and information appliances. [0003] The data storage device commonly used in embedded products is flash memory. Compared with other memories, flash memory has low capacity and access speed, and has extremely high requirements on the voltage of the operating environment. Embedded products often experience unpredictable low voltage or pow...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F11/14
Inventor 李德华
Owner KONKA GROUP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap