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Gallium nitride based semiconductor light emitting diode and method of manufacturing the same

A technology of light-emitting diodes and nitride semiconductors, applied in semiconductor devices, electrical components, circuits, etc.

Inactive Publication Date: 2007-04-04
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This problem is exacerbated in high-power LEDs used in large and medium-sized LCD backlights or lamps

Method used

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  • Gallium nitride based semiconductor light emitting diode and method of manufacturing the same
  • Gallium nitride based semiconductor light emitting diode and method of manufacturing the same
  • Gallium nitride based semiconductor light emitting diode and method of manufacturing the same

Examples

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Effect test

Embodiment 1

[0048] Structure of GaN-based semiconductor LED

[0049] Next, a GaN-based semiconductor LED according to a first embodiment of the present invention will be described in detail with reference to FIGS. 2 and 3 .

[0050] 2 and 3 are cross-sectional views of a GaN-based semiconductor LED according to a first embodiment of the present invention.

[0051] Referring to FIG. 2 , a GaN-based semiconductor LED 200 includes an n-type nitride semiconductor layer 202 , an active layer 203 , and a p-type nitride semiconductor layer 204 , which are sequentially formed on a sapphire substrate 201 . The sapphire substrate 201 is used to grow GaN-based semiconductor material. A portion of the p-type nitride semiconductor layer 204 and a portion of the active layer 203 are removed by a mesa etching process, thereby exposing a predetermined upper portion of the n-type nitride semiconductor layer 202 .

[0052] The n-type nitride semiconductor layer 202, the p-type nitride semiconductor layer...

Embodiment 2

[0073] Structure of GaN-based semiconductor LED

[0074] Next, a GaN-based semiconductor LED according to a second embodiment of the present invention will be described in detail with reference to FIG. 5 . For brevity, descriptions of the same parts as those of the first embodiment of the present invention will be omitted.

[0075] 5 is a cross-sectional view of a GaN-based semiconductor LED according to a second embodiment of the present invention.

[0076] Referring to FIG. 5, a GaN-based semiconductor LED 300 according to a second embodiment of the present invention has the same structure as the GaN-based semiconductor LED 200 according to the first embodiment of the present invention, except that a substituting heat conduction layer 209 is formed on a lower portion of a sapphire substrate 301. reflective layer 309 to fill the groove 308 outside.

[0077] That is, the GaN-based semiconductor LED 300 according to the second embodiment of the present invention includes: an n-...

Embodiment 3

[0086] Structure of GaN-based semiconductor LED

[0087] Hereinafter, a GaN-based semiconductor LED according to a third embodiment of the present invention will be described in detail with reference to FIG. 6 . For brevity, descriptions of the same parts as those of the first embodiment of the present invention will be omitted.

[0088] 6 is a cross-sectional view of a GaN-based semiconductor LED according to a third embodiment of the present invention.

[0089] Referring to FIG. 6, a GaN-based semiconductor LED 400 according to a third embodiment of the present invention has the same structure as the GaN-based semiconductor LED 200 according to the first embodiment of the present invention, except that a reflective layer 409 whose reflectivity is higher than that of a sapphire substrate 401 is further Formed between a sapphire substrate 401 having a groove 408 and a heat conduction layer 410 .

[0090] That is, the GaN-based semiconductor LED 400 according to the third emb...

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Abstract

A GaN based LED and a method of manufacturing the same are provided. The GaN based semiconductor LED can have an improved heat dissipation capability of a sapphire substrate, thereby preventing device characteristic from being degraded by heat and improving the luminous efficiency of the device. In the GaN based LED, a sapphire substrate has at least one groove formed in a lower portion thereof. A thermally conductive layer having higher thermal conductivity than the sapphire substrate is formed on a bottom surface of the sapphire substrate to fill the groove. An n-type nitride semiconductor layer is formed on the sapphire substrate, and an active layer and a p-type nitride semiconductor layer are sequentially formed on a predetermined portion of the n-type nitride semiconductor layer. A p-electrode and an n-electrode are formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 2005-89199 filed with the Korean Intellectual Property Office on September 26, 2005, the entire contents of which are hereby incorporated by reference. technical field [0003] The invention relates to a gallium nitride-based semiconductor light-emitting diode (LED) and a manufacturing method thereof. The gallium nitride-based semiconductor LED can improve the heat dissipation capability of the sapphire substrate, thereby avoiding device performance degradation caused by heat, and improving the luminous efficiency of the device. Background technique [0004] Since Group III-V nitride semiconductors such as GaN have excellent physical and chemical properties, they are considered as basic materials for light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs). LEDs or LDs formed of Group III-V nitride semiconductors are widely us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/32H01L33/42H01L33/60
CPCH01L33/641H01L33/0079H01L33/642H01L33/20H01L33/46H01L33/007H01L33/0093
Inventor 高健维吴邦元闵垘基朴亨镇黄硕珉
Owner SAMSUNG ELECTRONICS CO LTD
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