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High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same

A technology of switching elements and semiconductors, which is applied in the direction of semiconductor devices, output power conversion devices, electrical components, etc., and can solve the problems of large conduction loss, reduction loss, and large switching loss

Active Publication Date: 2010-05-12
PANASONIC SEMICON SOLUTIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0027] As mentioned above, in the case of using a MOSFET as a switching element, the conduction loss is large when the load is large; in the case of using an IGBT as a switching element, the switching loss is large at standby and when the load is small
Therefore, in conventional semiconductor switching elements, it is difficult to reduce the loss over the entire range from a small load to a heavy load.

Method used

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  • High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same
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  • High-breakdown voltage semiconductor switching device and switched mode power supply apparatus using the same

Examples

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no. 1 example

[0093] Hereinafter, a horizontal high withstand voltage semiconductor switching element and a switching power supply device using the horizontal high withstand voltage semiconductor switching element according to a first embodiment of the present invention will be described with reference to the drawings.

[0094] Figure 1 to Figure 3 , respectively are diagrams showing an example of the structure of the high withstand voltage semiconductor switching element of this embodiment, figure 2 is a floor plan; figure 1 is along figure 2 Sectional view of line A-A' in image 3 is along figure 2 Sectional view of line B-B' in . To add, in figure 2 In , the illustration of some structural factors is omitted.

[0095] exist Figure 1 to Figure 3 In the high withstand voltage semiconductor switching element of the present embodiment shown, the concentration is, for example, 1×10 14 / cm 3 left and right P - type semiconductor substrate 201 surface portion, formed with conce...

no. 2 example

[0126] Next, a horizontal high withstand voltage semiconductor switching element and a switching power supply device using the horizontal high withstand voltage semiconductor switching element according to a second embodiment of the present invention will be described with reference to the drawings.

[0127] Figure 10 , is a cross-sectional view showing an example of the structure of the high withstand voltage semiconductor switching element of this embodiment. Such as Figure 10 As shown, in the high withstand voltage semiconductor switching element of this embodiment and figure 1 The first embodiment shown differs in that it includes internally provided with a concentration of eg 1 x 10 16 / cm 3 The N-type RESURF region 217 of the left and right p-type semiconductor layers 216 replaces the RESURF region 202 of the first embodiment. It should be added that the p-type semiconductor layer 216 is formed in the portion (the surface portion of the RESURF region 217) that is ...

no. 3 example

[0131] Next, a horizontal high withstand voltage semiconductor switching element and a switching power supply device using the horizontal high withstand voltage semiconductor switching element according to a third embodiment of the present invention will be described with reference to the drawings.

[0132] Figure 11 , is a cross-sectional view showing an example of the structure of the high withstand voltage semiconductor switching element of this embodiment. Such as Figure 11 As shown, in the high withstand voltage semiconductor switching element of this embodiment and Figure 10 The second embodiment shown differs by including a concentration at a deeper location such as 1 x 10 16 / cm 3 The N-type RESURF regions 222 of the left and right p-type semiconductor layers 221 replace the RESURF regions 217 of the second embodiment. Specifically, the p-type semiconductor layer 221 is formed at a deeper position than the p-type semiconductor layer 216 in the resurf region 217 ...

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Abstract

Disclosed is a high-breakdown voltage semiconductor switching element and switched mode power supply apparatus using the same. N-type decreased surface electric field region is formed on the surface of P-type semiconductor substrate. P-type base region adjacent to the decreased surface electric field region are formed on the semiconductor substrate. Grid electrodes separated by the insulation filmare formed on the base region. N+-type emitter and source region separated from the decreased surface electric field region are formed on the base region. P+ type collector region and N+type drain electrode region separated from the base region are formed on the decreased surface electric field region. The collector and drain electrode electrically connected on the collector region and drain electrode region, and the emitter and source electrically connected on the base region and the emitter and source region are set. Therefore, a high-breakdown voltage semiconductor switching element and switched mode power supply apparatus using the same which reduces the loss with the load in the region of very small to very large are provided.

Description

technical field [0001] The present invention relates to a switching power supply device, and also relates to a high withstand voltage semiconductor switching element used in the switching power supply device and repeatedly switching the main current. Background technique [0002] In recent years, attention has been paid to reducing the standby power of home appliances and the like from the standpoint of countermeasures against global warming, and there has been a strong demand for switching power supply devices with low power consumption during standby. [0003] Next, a conventional switching power supply device will be described. [0004] Figure 22 , showing an example of the circuit configuration of a conventional switching power supply device. Such as Figure 22 As shown, the existing switching power supply device has an upstream rectification and filtering circuit 111 , a main circuit 112 , a transformer 104 and a downstream rectification and filtering circuit 121 . ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/78H02M3/28H02M3/335
Inventor 金子佐一郎山下哲司宇野利彦
Owner PANASONIC SEMICON SOLUTIONS CO LTD