Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Semiconductor integrated circuit

An integrated circuit and semiconductor technology, applied in the direction of semiconductor devices, circuits, semiconductor/solid device components, etc., can solve problems such as difficulty in ensuring capacitance, inability to form large capacitors, and inability to provide sufficient electrode area

Inactive Publication Date: 2007-05-16
KAWASAKI MICROELECTRONICS
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is a problem of not being able to provide a sufficient electrode area from a structural point of view and making it difficult to secure a sufficiently large capacitance, especially a problem that a large capacitor cannot be formed when the number of signal wirings increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor integrated circuit
  • Semiconductor integrated circuit
  • Semiconductor integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Various exemplary embodiments are described in detail below. FIG. 1 is a cross-sectional view showing a semiconductor integrated circuit according to an exemplary embodiment. As shown in FIG. 1, the semiconductor integrated circuit includes: a plurality of elements 2, such as MOSFETs, formed on the surface of a semiconductor substrate 1; and metal wiring layers, such as M1 and M2, for connecting the elements together to Make predetermined semiconductor integrated circuits work. These semiconductor integrated circuits are connected by metal wiring included in the metal wiring layer.

[0021] FIG. 1 shows a semiconductor integrated circuit having a multilayer wiring structure including a metal wiring layer M as the above-mentioned metal wiring layer 1 to M TOP . The top metal wiring layer (M TOP ) includes a plurality of top-layer power wirings extending in a first direction. directly on the top metal wiring layer M TOP The next top metal wiring layer below (M TOP...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor integrated circuit having a multilayer wiring structure is provided which includes: a top metal wiring layer (MTOP) including a plurality of top layer power supply wirings and a next-to-top metal wiring layer (MTOP-1) directly below the top metal wiring layer MTOP including a plurality of next-to-top layer power supply wirings. Each of the top layer and the next-to-top layer power supply wirings also includes first potential wirings for supplying a first potential to the circuit elements and second potential wirings for supplying a second potential to the circuit elements. The top layer power supply wirings and the next-to-top layer power supply wirings cross each other and have a top layer insulating film disposed between them. First and second contacts are provided in the insulating film for connecting the first potential wirings and second potential wirings in the top and the next-to-top metal wiring layers with each other.

Description

[0001] This application claims priority from Japanese Application No. 2005-325508 filed on November 10, 2005, the entire contents of which are hereby incorporated by reference. technical field [0002] The invention relates to a semiconductor integrated circuit operating at low voltage and high speed, in particular to a semiconductor integrated circuit capable of stabilizing the working power supply. Background technique [0003] In a semiconductor integrated circuit, power supply wiring and ground wiring whose resistance is sufficiently reduced are arranged in a circuit for supplying a specific voltage to each element and stably operating each element in the circuit. However, when high power consumption occurs locally in a semiconductor integrated circuit, the power supply voltage drops instantaneously in its vicinity. As a result, operation errors in logic circuits or jitter in output signals occur. This phenomenon remarkably occurs in semiconductor integrated circuits op...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L23/522
CPCH01L23/5286H01L23/5223H01L2924/0002H01L2924/00
Inventor 木村吉孝
Owner KAWASAKI MICROELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com