Semiconductor device and method of manufacturing the same
A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as low withstand voltage, reduced antistatic properties, and semiconductor device failures
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Embodiment 1
[0041]In FIG. 1, a plurality of element electrodes 12 for inputting and outputting signals to the outside are provided on a semiconductor substrate 11 in which a semiconductor integrated circuit composed of semiconductor elements such as transistors is formed. A passivation film 13 as a protective insulating film is formed on the entire surface of the semiconductor substrate 11 that opens at least a part of the element electrode 12, and an insulating buffer plating layer is formed on the passivation film 13 on the semiconductor integrated circuit formation region. film14. The buffer coating film 14 is generally made of photosensitive organic material such as polyimide, and is patterned with high precision by photolithography plate-making technology, with a thickness of several microns. Conductive region 15-1 is formed at corner 16 of semiconductor substrate 11. At least a part of conductive region 15-1 is the same as element electrode 12, and passivation film 13 is also opened...
Embodiment 2
[0046] In FIG. 2 , a conductive region 15 - 2 electrically connecting the conductive region 15 - 1 is formed in a ring shape on the outer periphery of the semiconductor substrate 11 in the peripheral region of the semiconductor substrate 11 where no element circuits are formed. Utilize the conductive region 15-2 that forms ring shape, can guarantee the conduction path of larger area, capacity, the electric charge that flows into the surface accumulation of buffer coating film 14 to it, thereby can reduce the charge density of the surface accumulation of buffer coating film 14 , Suppress the discharge itself, and improve the antistatic performance against static electricity affected by the outside. In the peripheral portion of the semiconductor substrate 11, a seal ring is generally arranged for the purpose of suppressing peeling of the interlayer insulating film caused by bonding and preventing water from intruding into the inside from the outside, so that the seal ring can be ...
Embodiment 3
[0049] In the semiconductor device of Embodiment 1 or Embodiment 2, as shown in FIG. 3, the buffer plating film 14 can be made The exposed conductive region 15-3 is connected to the surface end to form a conductive path. The buffer plating film 14 is formed to the corner of the semiconductor substrate 11 all the time, and the area of the conductive region 15-3 is reduced, so that the corner 16 of the semiconductor substrate 11 can ensure that the area for configuring the metal wiring for the circuit is large, and can prevent metal Electrostatic destruction of wiring and interlayer insulating films improves the antistatic properties of semiconductor devices and suppresses the increase in chip area. The buffer coating film 14 is generally made of a photosensitive organic material such as polyimide, and photolithography plate-making technology is used, so that the degree of freedom of the pattern is large, and a pattern with good dimensional accuracy can be formed. The conduct...
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