Electronic device including a termination structure

Abstract

An electronic device can include a termination structure that includes a substrate, a semiconductor layer, and a first trench. The substrate includes a semiconductor material of a first conductivity type. The semiconductor layer has a second conductivity type opposite the first conductivity type and overlies the substrate and has a primary surface. The first trench extends through a majority of a thickness of the semiconductor layer. In an embodiment, a body extension region of the second conductivity type is adjacent to the primary surface and spaced apart from the first trench. In another embodiment, a doped region of the first conductivity type is adjacent to the primary surface and abuts the first trench. In a further embodiment, the termination structure can include a second trench extending through a majority of the thickness of the semiconductor layer and a doped region is spaced apart from the first and second trenches.

Description

FIELD OF THE DISCLOSURE[0001]The present disclosure relates to electronic devices including terminating structures and processes of forming such electronic devices.RELATED ART[0002]Power transistors can operate at voltages of 50 V and higher. The periphery of a die may be maintained at the drain voltage, and an active region of the electronic device can be in the interior of the die. A termination structure is maintained between the periphery of the die and the active region, so that the source and drain of the device do not break down at an unacceptably low voltage. Like the active region, a termination structure blocks voltage in an off-state, but unlike the active region, a termination structure does not have to pass current in an on-state. As the voltage between the source and drain increases, more robust termination structures are used.[0003]Tradeoffs may be involved in the design of the electronic device. On-state resistance is to be small while the breakdown voltage between t...

AI Technical Summary

Benefits of technology

This patent relates to making electronic devices and how to make them better. Specifically, it focuses on improving the way that electronic devices are made to better contact other components. This can make components last longer and work more efficiently.

Problems solved by technology

Nevertheless, existing superjunction construction technologies suffer from a number of shortcomings, including limited pitch (causing semiconductor area to be wasted) and termination difficulty.

The former shortcoming can result in relatively large termination structures, and the later shortcoming may limit device reliability and yield.

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