Micro-LED chip and manufacturing method thereof, and display panel

Abstract

The present invention provides a micro-LED chip, a manufacturing method of the micro-LED chip, and a display panel. The micro-LED chip includes a plurality of sub-chips connected in series. The first sub-chip and the last sub-chip are connected to a first electrode and a second electrode, respectively. Accordingly, a voltage across the micro-LED chip is increased, power consumption of a driving thin film transistor (TFT) is reduced, and a high power consumption problem of driving TFTs in conventional micro-LED displays is improved.

Description

[0001]This application claims priority to Chinese patent application no. 201910466611.8, entitled “Micro-LED Chip and Manufacturing Method thereof, and Display Panel”, filed on May 31, 2019, and the entire contents of which are incorporated by reference in this application.1. FIELD OF DISCLOSURE[0002]The present invention relates to a field of display technology and in particular, to a micro-LED chip and a manufacturing method thereof, and a display panel.2. DESCRIPTION OF RELATED ART[0003]Micro-LEDs have become the focus of next-generation display technology due to their higher brightness, better luminous efficiency, and lower power consumption.[0004]However, since a driving thin film transistor (TFT) mainly works in a saturation region during display, a voltage across a source electrode and a drain electrode of the TFT is large, but the voltage across the micro-LED is low, which increases power consumption and leads to low drive efficiency.[0005]Therefore, there is a need to provi...

AI Technical Summary

Benefits of technology

[0044]The present invention provides a micro-LED chip and a manufacturing method thereof, wherein the micro-LED chip comprises a buffer layer, a first semiconductor layer, an active layer, a second semiconductor layer, an insulating layer, a current diffusion layer, a protective layer, and a first electrode and a second electrode which are stacked on each other. The insulating layer divides the first semiconductor layer, the active layer, and the second semiconductor layer into at least two sub-chips separated from each other, the second semiconductor layer in each sub-chip is connected to the first semiconductor layer in the next sub-chip via the current diffusion layer, the first electrode is electrically connected to the first semiconductor layer of the first sub-chip, and the second electrode is electrically connected to the second semiconductor layer of the last sub-chip. The sub-chips are separated by the insulating layer, and the sub-chips are connected in series by the current diffusion layer, thereby increasing a voltage across the micro-LED, reducing power consumption of a driving thin film transistor (TFT), and improving a high power consumption problem of driving TFTs of conventional micro-LED displays.

Problems solved by technology

However, since a driving thin film transistor (TFT) mainly works in a saturation region during display, a voltage across a source electrode and a drain electrode of the TFT is large, but the voltage across the micro-LED is low, which increases power consumption and leads to low drive efficiency.

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