MOSFET with lateral resistor ballasting

a mosfet and resistor technology, applied in the direction of resistors, semiconductor devices, electrical equipment, etc., can solve the problems of increasing resistive losses with attendant temperature increase, poor conductors of heat, and increasing curren
US20010031552A1Inactive Publication Date: 2001-10-18INT BUSINESS MASCH CORP
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
INT BUSINESS MASCH CORP
Publication Date
2001-10-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

The current density profile in the conduction channel of a field effect transistor is controlled and thermal gradients are limited under extreme operating conditions by providing lateral resistive ballasting at the source / drain regions adjacent the conduction channel. A distributed resistance is formed by inhibiting conversion of a region of deposited salicide from a high resistance phase state to a low resistance phase state through formation of the deposit with a width or area less than a critical dimension.
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Description

[0001] 1. Field of the Invention

[0002] The present invention generally relates to high density integrated circuits and, more particularly, to regulating performance and conduction characteristics of MOSFET devices included therein.

[0003] 2. Description of the Prior Art

[0004] The enhancements to performance and economy of manufacture derived from high density integration of semiconductor integrated circuits have been recognized for several years. During this same period of time, field effect transistor (FET) technology has generally become the technology of choice for all but the most critical of applications in view of scalability of field effect transistors to small sizes consistent with conduction requirements and other properties facilitating process economy, integration density and high manufacturing yield as well as exhibiting good operating margins and low drive current requirements. field effect transistors function as switching device by using a field developed by a voltage ...

Claims

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