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Modified source/drain re-oxidation method and system

a source/drain reoxidation and source technology, applied in the field of modified source/drain reoxidation process, can solve the problems of increasing the need for memory storage, and the increase in the number of memory cells, and the limited way of modifying the profil

Inactive Publication Date: 2002-07-25
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As computers become increasingly complex, the need for memory storage, and in particular the number of memory cells, increases.
However, there are only limited ways to modify this profile.
However, this approach is limited.

Method used

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  • Modified source/drain re-oxidation method and system
  • Modified source/drain re-oxidation method and system
  • Modified source/drain re-oxidation method and system

Examples

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Embodiment Construction

[0026] For the purposes of describing and defining the present invention, formation of a material "on" a substrate or layer refers to formation in contact with a surface of the substrate or layer. Formation "over" a substrate or layer refers to formation above or in contact with a surface of the substrate. Formation "in" a substrate or layer refers to formation of at least a portion of a structure in the interior of a substrate or layer. A "wafer" is a thin, usually round slice of semiconductor material, such as silicon, from which chips are made. A "substrate" is the underlying material upon which a device, circuit, or epitaxial layer is fabricated. A "flash memory device" includes a plurality of memory cells. Each "memory cell" of a flash memory device can comprise components such as a gate, floating gate, control gate, wordline, channel region, a source, self aligned source and a drain. A self aligned source (SAS) is a semiconductor structure that allows a number of cells to shar...

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PUM

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Abstract

Methods and devices are disclosed utilizing a phosphorous doped oxide layer that is added prior to re-oxidation. This allows greater control of the re-oxidation process and greater control of the performance characteristics of semiconductor devices such as flash memory. For flash memory, greater control is gained over programming rates, erase rates, data retention and self aligned source resistance.

Description

BACKGROUND OF THE INVENTION[0001] The present invention relates to the field of semiconductor manufacture and, more particularly, to a modified source / drain re-oxidation process.[0002] As computers become increasingly complex, the need for memory storage, and in particular the number of memory cells, increases. At the same time, there is the need to minimize the size of computers and memory devices. A goal of memory device fabrication is to increase the number of memory cells per unit area or wafer area.[0003] Memory devices contain blocks or arrays of memory cells. A memory cell stores one bit of information. Bits are commonly represented by the binary digits 0 and 1. A conventional non-volatile semiconductor memory device in which contents can be electrically programmable or simultaneously erased by one operation is a flash memory device.[0004] Flash memory devices have the characteristics of low power and fast operation making them ideal for portable devices. Flash memory is comm...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/316H01L21/336H01L21/8247H10B12/00H10B69/00
CPCH01L21/02129H01L21/022H01L21/0234H01L21/31625H01L27/115H01L27/11521H01L29/6659H01L29/66659H01L29/66825H10B69/00H10B41/30
Inventor RUDECK, PAUL J.BENISTANT, FRANCISHURLEY, KELLY
Owner MICRON TECH INC