Method for fabricating a capacitor containing metastable polysilicon

Abstract

Disclosed is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an insulating interlayer including a storage node contact hole on a semiconductor substrate, forming a polysilicon layer on the insulating interlayer including the storage node contact hole, and forming a sacrificial resist layer on the polysilicon layer, thereby filling the storage node contact hole with the sacrificial resist layer. Also, the method comprises the steps of selectively removing the sacrificial resist layer in such a manner that the sacrificial resist layer remains only in the storage node contact hole, implanting ions into an upper surface of an exposed upper surface of the polysilicon layer, oxidizing an ion-implanted portion of the polysilicon layer after removing a remaining sacrificial resist layer, growing an MPS layer on a surface of the polysilicon layer after removing an oxidized portion of the polysilicon layer, and forming a dielectric layer and an upper electrode on the polysilicon layer including the MPS layer. It is possible to grow MPS without interference of a carbon component generated during the etch back process, which is performed to form a cylinder capacitor by using storage node polysilicon.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a method for fabricating a capacitor of a semiconductor device, and more particularly to a method for fabricating a capacitor of a semiconductor device capable of forming a cylinder without etching back storage node polysilicon, in order to easily grow MPS (Meta Poly silicon) affected by a carbon component generated through a storage node polysilicon etch back process, which is performed for forming a cylinder capacity using the storage node polysilicon. [0003] 2. Description of the Prior Art [0004] Hereinafter, a conventional method for fabricating a capacitor of a semiconductor device will be briefly described. [0005]FIGS. 1a to 1f are sectional views showing the conventional method for fabricating the capacitor of the semiconductor device. [0006] As shown in FIG. 1a, according to the conventional method for fabricating the capacitor of the semiconductor device, a first insulating ...

AI Technical Summary

Benefits of technology

The present invention provides a method for fabricating a capacitor of a semiconductor device that can form a cylinder without etching back storage node polysilicon. This method helps to easily grow MPS (Meta Poly silicon) that is affected by a carbon component generated through a storage node polysilicon etch back process. The method includes steps of forming an insulating interlayer with a storage node contact hole, forming a polysilicon layer, forming a sacrificial resist layer, selectively removing the sacrificial resist layer, implanting ions, oxidizing the ion-implanted portion of the polysilicon layer, growing an MPS layer, and forming a dielectric layer and an upper electrode on the polysilicon layer including the MPS layer.

Problems solved by technology

In other words, the etch back process for the storage node polysilicon layer, which is performed in order to insulate between cylinders, may interfere the MPS growth.

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