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Pixel based machine for patterned wafers

a pixel-based machine and wafer technology, applied in the field of surface inspection of semiconductor wafers, can solve the problems of inability or useless further operation, and achieve the effect of shortening processing times

Inactive Publication Date: 2005-06-16
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is a method and apparatus for inspecting semiconductor wafers by analyzing the individual pixels on the wafer. The method is designed to detect defects, particularly foreign particles, without needing information about the pattern or position of the pixel. This allows for quick and constant inspection of wafers as they are produced, and can detect catastrophic defects that may occur in the production process. The method can be used in conjunction with existing production tools and can provide an early warning of any issues in the production process. The apparatus includes a laser or other light source, optical trains, and a detection system.

Problems solved by technology

Sometimes unforeseen phenomena may occur in the production line that are so far-reaching as to render its further operation impossible or useless.

Method used

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  • Pixel based machine for patterned wafers
  • Pixel based machine for patterned wafers
  • Pixel based machine for patterned wafers

Examples

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Embodiment Construction

[0115]FIGS. 1 and 2 schematically represent an apparatus according to an embodiment of the invention. Numeral 10 indicates a wafer that is being inspected. The apparatus used for the inspection comprises a stage having a wafer support. The wafer is placed on said support, which in this embodiment is a support plate 11, which is rotated about shaft 12 by mechanical means, not shown as being conventional. A laser source is shown at 13 in its central position, above the axis of shaft 12. However, more than one source could be provided and any source could be placed at an angle to the axis of shaft 12, to provide the required illumination of the wafer, depending on the type of wafer under inspection. In FIG. 2 one such additional laser source is shown, by way of illustration, oriented at an angle β from the plane of the wafer. Mechanical means, not shown as being conventional, translate the shaft 12, viz. shift it, while maintaining it parallel to itself, so that any point thereof moves...

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Abstract

A method is provided for the detection of defects on a semiconductor wafer by checking individual pixels on the wafer, collecting the signature of each pixel, defined by the way in which it responds to the light of a scanning beam, and determining whether the signature is that of a faultless pixel or of a pixel that is defective or suspect to be defective. An apparatus is also provided for the determination of such defects, which comprises a stage for supporting a wafer, a laser source generating a beam that is directed onto the wafer, collecting optics and photoelectric sensors for collecting the laser light scattered by the wafer in a number of directions and generating corresponding analog signals, an A / D converter deriving from the signals digital components defining pixel signatures, and selection systems for identifying the signatures of suspect pixels and verifying whether the suspect pixels are indeed defective.

Description

FIELD OF THE INVENTION [0001] The invention relates to the inspection of surfaces, particularly the surfaces of semiconductor wafers, intended for the detection of possible defects, particularly due to the presence of particles. More particularly the invention relates to the control of semiconductor manufacturing processes, particularly Quality Control, Process Monitoring and Control and Catastrophe Detection. The invention further comprises method and apparatus for the inline control of wafer production and the immediate recognition of any fault or irregularities in the production line. BACKGROUND OF THE INVENTION [0002] The detection of defects and / or of the presence of foreign substances on semiconductor wafers has received considerable attention in the art. Defects can be caused by an imperfect production of the desired pattern. Further, particles of various kinds may adhere to a wafer surface for a number of reasons. [0003] The inspection process can be carried out on bare wafe...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G01N21/88G01N21/956G01N21/94
CPCG01N21/94G01N21/9501G01N21/9505G01N2021/8893
Inventor SMILANSKY, ZEEVTSADKA, SAGIELAPIDOT, ZVISHERMAN, RIVI
Owner APPLIED MATERIALS INC
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