Reflective liquid crystal display device
a liquid crystal display and reflector technology, applied in the direction of static indicating devices, identification means, instruments, etc., can solve the problems of significantly shortening the manufacturing process of liquid crystal display devices, and achieve the effect of improving productivity and simplifying the manufacturing process
Inactive Publication Date: 2005-10-06
FUJINO MASAHIRO
View PDF19 Cites 3 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
[0014] Accordingly, it is an object of the present invention to simplify the process for manufacturing an active matrix reflective liquid crystal display device to improve productivity.
[0015] The inventors found a process for manufacturing a reflective liquid crystal display device in which a photoresist layer was provided on an interlayer insulating film formed on a silicon film in which sources and drains of TFTs were formed, and then patterned by photolithography using a specified photomask to simultaneously form apertures corresponding to contact holes to be formed above the sources or the drains, and an irregular shape in the photoresist layer corresponding to the surface irregularity of a reflecting electrode, and then the interlayer insulating film is etched by using the photoresist layer as an etching mask to simultaneously the contact holes and the irregular surface shape in the interlayer insulating film corresponding to the reflecting electrode. This could significantly shorten the process for manufacturing a liquid crystal display device.
Problems solved by technology
This could significantly shorten the process for manufacturing a liquid crystal display device.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0035] The present invention will be described in detail below with reference to the drawings. In the drawings, the same reference numerals respectively denote the same or equivalent components.
[0036]FIG. 1 is a drawing illustrating the steps of a method of manufacturing a liquid crystal display device having a pixel structure comprising bottom gate structure TFTs according to an embodiment of the present invention.
[0037] In this method, as shown in FIG. 1A, a metal film of Mo, Cr, Al, Ta, W, or the like is first deposited on a transparent substrate 1, and then dry-etched by photolithography to form gates G and auxiliary capacitance electrodes Cs, and a silicon nitride film or silicon oxide film, or a laminate thereof is formed as a gate insulating film 2 by sputtering or CVD. Furthermore, a polysilicon film 3 is formed on the gate insulating film 2. The polysilicon film forming method comprises forming a semiconductor layer on the gate insulating film 2, dehydrogenating the semic...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| transparent | aaaaa | aaaaa |
| transparent conductive | aaaaa | aaaaa |
Login to View More
Abstract
The present invention provides a method of manufacturing an active matrix reflecting liquid crystal display device including the step of forming and processing an interlayer insulating film. The step forming and processing an interlayer insulating film includes step A of forming the interlayer insulating film on a silicon film in which the sources and drains of TFTs are formed; step B of forming a photoresist layer on the interlayer insulating film; step C of patterning the photoresist layer in a specified pattern by using, as a photoresist mask for the photoresist layer, a mask having a pattern formed with a resolution limit or less corresponding to the reflecting electrode to be formed; and step D of etching the interlayer insulating film by using the photoresist layer patterned in step C as an etching mask. After step D, a metal film is deposited for simultaneously forming source electrodes, signal wiring, drain electrodes, and the reflecting electrode. The manufacturing method can thus be simplified to improve productivity.
Description
BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a technique for simultaneously forming irregularity in a surface of a reflecting electrode and contact holes in an interlayer insulating film formed on a silicon film, in which sources and drains of TFTs are formed, above the sources or drains in a process for manufacturing a reflective liquid crystal display device, to shorten the manufacturing process. [0003] 2. Description of the Related Art [0004] In a conventional active matrix reflective liquid crystal display device in which each of pixel electrodes comprises a reflecting electrode serving as a reflecting scattering plate by surface irregularity, a driving-side TFT substrate is manufactured as shown in FIG. 13. FIG. 13 shows a manufacturing process for a liquid crystal device having a pixel structure comprising bottom gate structure TFTs. However, a pixel structure comprising top gate structure TFTs can also be manufactured by...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(United States)
IPC IPC(8): G02F1/1335G02F1/133G02F1/1343G02F1/136G02F1/1362G02F1/1368G09F9/30H01L21/336H01L29/786
CPCG02F1/136227G02F1/133553G02F1/133
Inventor FUJINO, MASAHIRO
Owner FUJINO MASAHIRO