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Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device

a technology of vapor phase deposition and thin film, which is applied in the direction of chemical vapor deposition coating, coating, transistor, etc., can solve the problems of difficult heating of the valve, difficult to provide a sufficient heat, and relatively large volume of the valve, so as to achieve the effect of improving quality

Inactive Publication Date: 2005-12-08
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0014] Since, in the method for forming the thin film and the method for manufacturing the semiconductor device according to the present invention, the vapor phase deposition apparatus comprising the above-described configuration is employed, the temperature in the valve can be maintained at desirably higher temperature. Thus, the condensation of the source gas in the valve is inhibited, and the generation of the particles on the thin film is inhibited. As a result, the thin film and the semiconductor device having improved quality can be stably obtained.

Problems solved by technology

However, it has now been discovered that an unwanted phenomenon of generating particles on the deposited thin film has often been found in the vapor phase deposition apparatus described in Japanese Patent Laid-Open No. 2000-282,242.
However, the valve has relatively larger volume, and thus has a structure that is difficult to be heated.
Therefore, it is difficult to provide a sufficient heat to the interior of the valve to maintain thereof at a preset temperature, and thus condensation of the source gas is occurred.
As a result, the structure thereof includes a problem, which inherently promotes generating particles.

Method used

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  • Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
  • Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
  • Vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device

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first embodiment

[0033]FIG. 1 shows a vapor phase deposition apparatus according to the present embodiment.

[0034] The vapor phase deposition apparatus 100 according to the present embodiment is a type of a vapor phase deposition apparatus for forming a thin film, and comprises a chamber 1060, a vaporizing unit (source supplying section 1120) that is capable of vaporizing a source material for thin film to generate a source gas, a piping unit 120 provided between the chamber and the vaporizing unit and a temperature control unit 180 for controlling the temperature of the piping unit 120.

[0035] The piping unit 120 comprises a first piping 116 connected to the chamber 1060, a second piping 114 connected to the vaporizing unit and a valve 159 provided between the first piping 116 and the second piping 114.

[0036] The temperature control unit 180 includes a first temperature control unit 174 that is capable of controlling the temperature of the first piping 116 connected to the chamber 1060 among the p...

second embodiment

[0096] An experiment for investigating number of particles generated on the deposited thin film employing vapor phase deposition apparatus 100 described in the first embodiment and employing various types of amino acids including TEMAZ as the first source material, under a condition of changing the temperature by changing electric power to the valve 159, was conducted. The temperature presets of the respective regions in the piping unit 120 except the temperature of the valve 159 were presented as shown in Table 4. Further, the process for manufacturing the thin film was that described in the first embodiment.

TABLE 4PIPING UNIT 120VAPORIZER(EXCLUDING VALVE 159)202TEMAZ80 degree C. to60 degree C. to100 degree C.85 degree C.TDEAZ85 degree C. to65 degree C. to105 degree C.90 degree C.TEMAH90 degree C. to70 degree C. to110 degree C.95 degree C.TDEAH100 degree C. to80 degree C. to120 degree C.105 degree C.

[0097] Results of the experiments conducted for the amino acids including TEMAZ i...

third embodiment

[0103]FIG. 4 schematically illustrates a status of the vapor phase deposition apparatus 200 according to the present embodiment during the introduction of the first source gas.

[0104] The vapor phase deposition apparatus 200 in the present embodiment has substantially the same configuration as the configuration of the vapor phase deposition apparatus 100 according to the first embodiment, except that the temperature of the valve 159 between the second piping 114 and the first piping 116 is controlled by the same heater that is also used for controlling the temperature of the first piping 116.

[0105] The vapor phase deposition apparatus 200 comprises, in the piping unit 120 for supplying the first source material: a first temperature control unit 184, which is composed of a heater controller unit 172 and a tape heater 170 and is capable of controlling the temperature of the first piping 116 and the valve 159; and a second temperature control unit 186, which is composed of a heater co...

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Abstract

A vapor phase deposition apparatus 100 for forming a thin film comprising a chamber 1060, a piping unit 120 for supplying a source material of the thin film into the chamber 1060 in a gaseous condition, a vaporizer 202 for vaporizing the source material in a source material container 112 and supplying the vaporized gas in the piping unit 120 and a temperature control unit 180, is presented. The temperature control unit 180 comprises: a first temperature control unit 174, which is composed of a heater controller unit 172 and a tape heater 170 and is capable of controlling the temperature of the first piping 116 in the piping unit 120 that is directly connected to the chamber 1060; a second temperature control unit 176, which is composed of a heater controller unit 168 and a tape heater 166 and is capable of controlling the temperature of the second piping 114 that is connected to the vaporizer; and a third temperature control unit 178, which is composed of a heater controller unit 167 and a thermostatic chamber 153 and is capable of controlling the temperature of the valve 159.

Description

[0001] This application is based on Japanese patent application NO.2004-164,124, the content of which is incorporated hereinto by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a vapor phase deposition apparatus, a method for depositing a thin film and a method for manufacturing a semiconductor device. [0004] 2. Related Art [0005] In recent years, various innovations on methods for supplying a source gas into a chamber, or in other words, innovations on piping units, are actively made for the purpose of providing a stable growth or deposition of a thin film having improved quality with a vapor phase deposition apparatus. Typical example of such techniques includes a technique disclosed in Japanese Patent Laid-Open No. 2000-282,242. [0006] Japanese Patent Laid-Open No. 2000-282,242 describes a technique for controlling a temperature such that a temperature through a piping from an outlet of a vaporizer to a chamber are ...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/00C23C16/30C23C16/448C23C16/52H01L21/00H01L21/31H01L21/8242H01L27/108H01L29/78
CPCC23C16/30C23C16/4485H01L21/67248C23C16/52H01L21/67103C23C16/45544
Inventor YAMAMOTO, TOMOEIINO, TOMOHISA
Owner NEC ELECTRONICS CORP