Semiconductor image sensor and method for fabricating the same

Abstract

A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to semiconductor image sensors and methods for fabricating the same. [0003] 2. Description of the Related Art [0004] In recent years, as electronic devices have become smaller, thinner and lighter, there has been a growing demand for high-density packaging of semiconductor components. Because of this demand together with the high degree of integration achieved by the development of fine processing technology, semiconductor imaging elements, in particular, are being strongly required to shift from a conventional package type, in which a semiconductor imaging element is incorporated into a package, to another type, in which a semiconductor imaging element as a bare chip is directly mounted onto an electronic device. [0005] For example, Japanese Laid-Open Publication No. 2004-111792 discloses a semiconductor package, which includes no through-hole conductors so as to be reduced in thicknes...

AI Technical Summary

Benefits of technology

[0008] However, in the above-described first conventional example, the electrical connection between the connection pads provided in the semiconductor substrate and the solder balls is made by way of the outer sides of the semiconductor substrate. This increases the plan dimension of the semiconductor image sensor, thereby making it difficult to reduce the size thereof.

[0009] In the second conventional example, it is possible to remove optical noise, such as flares and smears, caused by reflected light entering the imaging area. Nevertheless, since the second conventional example uses gold wires to establish the connection, incoming light from the upper surface of the transparent resin may strike the upright portions of the gold wires and then may be reflected from the upright portions. And the reflected light may enter the imaging area. If the reflected light enters the imaging area, flares and smears may be caused in the image.

[0010] It is therefore an object of the present invention to provide a smaller and thinner semiconductor image sensor capable of removing optical noise, such as flares and smears, and a method for fabricating the sensor.

Problems solved by technology

This increases the plan dimension of the semiconductor image sensor, thereby making it difficult to reduce the size thereof.

If the reflected light enters the imaging area, flares and smears may be caused in the image.

Images