Current-perpendicular-to-plane magnetoresistance effect device with double current control layers
a current control, perpendicular-to-plane technology, applied in the field of current-perpendicular-to-plane magnetoresistance effect devices, can solve the problems of small resistance change amount, small recording bit size, and inability to obtain sufficient reproduced signal output with the induction head
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first embodiment
[0024]FIG. 1 is a sectional view schematically showing a first embodiment of a magnetoresistance effect element according to the present invention. In FIG. 1, on a substrate (not shown), the following are stacked one on top of another in this order: a lower electrode 1, a seed layer 2, a lower pinning layer 3, a first current control layer 8, a lower nonmagnetic intermediate layer 4, a free layer 5, an upper nonmagnetic intermediate layer 6A, a second current control layer 9, an upper nonmagnetic intermediate layer 6B, an upper pinning layer 7, a cap layer 10, and an upper electrode 11.
[0025] The first current control layer 8 is formed at the interface between the lower pinning layer 3 and the lower nonmagnetic intermediate layer 4. The upper nonmagnetic intermediate layer 6A and upper nonmagnetic intermediate layer 6B are originally formed as the same film (an upper nonmagnetic intermediate layer 6) in such a manner that the second current control layer 9 is sandwiched between the...
second embodiment
[0038]FIG. 3 is a sectional view schematically showing a second embodiment of the magnetoresistance effect element according to the present invention. In FIG. 3, the same parts as those in FIG. 1 are indicated by the same reference numerals. Only the parts differing from FIG. 1 will be explained. In FIG. 3, on a substrate (not shown), the following are stacked one on top of another in this order: a lower electrode 1, a seed layer 2, a lower antiferromagnetic layer 12, a lower pinning layer 3, a lower nonmagnetic intermediate layer 4A, a first current control layer 8, a lower nonmagnetic intermediate layer 4B, a free layer 5, an upper nonmagnetic intermediate layer 6, an upper pinning layer 7, a second current control layer 9, an upper antiferromagnetic layer 13, a cap layer 10, and an upper electrode 11.
[0039] The second current control layer 9 is formed at the interface between the upper pinning layer 7 and the upper antiferromagnetic layer 13.
[0040] The first current control lay...
third embodiment
[0043]FIG. 4 is a sectional view schematically showing a third embodiment of the magnetoresistance effect element according to the present invention. In FIG. 4, the same parts as those in FIGS. 1 and 3 are indicated by the same reference numerals. Only the parts differing from FIGS. 1 and 3 will be explained. In FIG. 4, on a substrate (not shown), the following are stacked one on top of another in this order: a lower electrode 1, a seed layer 2, a lower antiferromagnetic layer 12, a lower pinning layer 3, a lower nonmagnetic intermediate layer 4A, a first current control layer 8, a lower nonmagnetic intermediate layer 4B, a free layer 5, an upper nonmagnetic intermediate layer 6A, a second current control layer 9, an upper nonmagnetic intermediate layer 6B, an upper pinning layer 7, an upper antiferromagnetic layer 13, a cap layer 10, and an upper electrode 11. The second current control layer 9 is provided so as to be sandwiched between the upper nonmagnetic intermediate layer 6A a...
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Abstract
Description
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