Nonvolatile memory with error correction for page copy operation and method thereof

a nonvolatile memory and page copy technology, applied in the field of nonvolatile flash memory, can solve the problems of page copying and copying having their own error bits, two-bit errors in pages that cannot be corrected after completing the copy back operation, and the circuit architecture is much more complex, so as to prevent the transcription of error bits

Inactive Publication Date: 2008-07-03
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0009]Embodiments of the present invention provide a nonvolatile memory capable of maintaining the integrity of data through a page copy operation, and a method thereof. Such a nonvolatile memory is capable of preventing a transcription of error bits during a page copy operation.

Problems solved by technology

However, unfortunately, it may occur that the pages to be copied and to be written have their own error bits.
Because most flash memory controllers used as subsystem controllers in a card-type memory are usually only designed to correct one-bit error for a page, such a two-bit error in a page may be incapable of being cured after completing the copy back operation.
Although a flash memory controller could be equipped with an error correcting function capable of coping even with the two-bit error per page, it would cause the circuit architecture to be much more complex and thereby deteriorate operational efficiencies in the memory control system.

Method used

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  • Nonvolatile memory with error correction for page copy operation and method thereof
  • Nonvolatile memory with error correction for page copy operation and method thereof
  • Nonvolatile memory with error correction for page copy operation and method thereof

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Embodiment Construction

[0027]It should be understood that the description of the preferred embodiment is merely illustrative and that it should not be taken in a limiting sense. In the following detailed description, several specific details are set forth in order to provide a thorough understanding of the present invention. It will be obvious, however, to one skilled in the art that the present invention may be practiced without these specific details.

[0028]A flash memory applicable to the present invention is embodied on a NAND flash memory, adaptable to be embedded in portable electronic devices such as integrated circuit cards, in which a number of memory cells are arranged in the pattern of strings coupled to a plurality of wordlines and bitlines disposed in a matrix of rows and columns.

[0029]A NAND flash memory according to embodiments of the present invention has a memory cell array divided into a plurality of pages designated by addresses. Each page is formed of a number of memory cells coupled to...

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Abstract

The disclosure is a NAND flash memory with the function of error checking and correction during a page copy operation. The NAND flash memory is able to prohibit transcription of erroneous bits to a duplicate page from a source page. Embodiments of the inventive flash memory include a correction circuit for correcting bit errors of source data stored in a page buffer, a circuit configured to provide the source data to the correction circuit and to provide correction data to the page buffer, and a copy circuit configured to copy the source data to the page buffer, and to store the correction data in the other page from the page buffer.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application is a Continuation of U.S. patent application Ser. No. 10 / 817,061, filed Apr. 2, 2004, now pending, which claims priority from Korean Patent Application No. 2003-21114, filed Apr. 3, 2003, the contents of which are herein incorporated by reference in their entirety.FIELD OF THE INVENTION[0002]This disclosure generally relates to nonvolatile flash memories and more specifically, to flash memories for reliable page copy operations with error correcting functions and their methods of operating therein.BACKGROUND OF THE INVENTION[0003]Flash memories are commonly applicable to mass storage subsystems for electronic devices employed in mobile communications, game sets, and so forth. Such subsystems are usually implemented as either removable memory cards that can be inserted into multiple host systems or as non-movable embedded storage within the host systems. In both implementations, the subsystem includes one or more flash dev...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G06F11/14G06F12/02G06F12/06G06F12/16G11C16/02G11C16/04G11C16/06G11C16/10G11C16/26G11C29/42
CPCG06F11/1068G11C16/26G11C16/10G06F12/06
Inventor LEE, JIN-YUB
Owner SAMSUNG ELECTRONICS CO LTD
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